Product Information

PD54003L-E

Name: PD54003L-E
Brand: STMicroelectronics
SKU: PD54003LE_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

PD54003L-E electronic component of STMicroelectronics

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Datasheet

Transistors RF MOSFET RF Pwr Transistors LDMOST Plastic Fam

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 MOQ : 1 Multiples : 1 PD54003L-E STMicroelectronics	1 : USD 8.8674 10 : USD 7.9418 25 : USD 7.574 100 : USD 7.0284 250 : USD 6.7239 500 : USD 6.3814 1000 : USD 6.0389 3000 : USD 6.0389 6000 : USD 5.5821		N/A Obsolete

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Additional Infomation About Product

PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P =3 W mith 20dB gain 500 MHz OUT New leadless plastic package ESD protection Supplied in tape and reel of 3 K units In compliance with 2002/95/EC european directive PowerFLAT(5x5) Description The PD54003L-E is a common source N-channel, enhancement-mode lateral field-effect RF power Figure 1. Pin configuration transistor. It is designed for high gain, broadband commercial and industrial application. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54003L-E boasts the excellent gain, linearity and reliability of STH1LV latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT. PD54003L-Es superior linearity performances makes it an ideal solution for car mobile radio. TOP VIEW Table 1. Device summary Order code Marking Package Packaging PD54003L-E 54003 PowerFLAT(5x5) Tape and reel May 2011 Doc ID 11957 Rev 3 1/11 www.st.com 11Contents PD54003L-E Contents Contents 2 1 Maximum ratings 3 2 Electrical specification . 4 3 Typical performances 5 3.1 Typical performance (broadband) 6 4 Package mechanical data . 7 5 Revision history . 10 2/11 Doc ID 11957 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category RF MOSFET Transistors RF MOSFET Transistors
RoHS - XON Y Y
Transistor Polarity N - Channel N - Channel
Technology Si Si
Id - Continuous Drain Current 4 A 4 A
Vds - Drain-Source Breakdown Voltage 25 V 25 V
Operating Frequency 1 GHz 1 GHz
Gain 20 Db At 500 Mhz 20 Db At 500 Mhz
Output Power 3 W 3 W
Configuration Single Single
Pd - Power Dissipation 19.5 W 19.5 W
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case Powerflat (5X5) Powerflat (5X5)
Packaging Reel Reel
Vgs - Gate-Source Voltage 15 V 15 V
Series Pd54003l - E Pd54003l - E
Brand Stmicroelectronics Stmicroelectronics
Gate-Source Breakdown Voltage 15 V 15 V
Factory Pack Quantity : 3000 3000
Type Rf Power Mosfet Rf Power Mosfet
Channel Mode Enhancement Enhancement
Cnhts 8541210000 8541210000
Hts Code 8541290095 8541290095
Mxhts 85412101 85412101
Product Type Rf Mosfet Transistors Rf Mosfet Transistors
Subcategory Mosfets Mosfets
Taric 8541210000 8541210000