PD54003L-E STMicroelectronics

PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P =3 W mith 20dB gain 500 MHz OUT New leadless plastic package ESD protection Supplied in tape and reel of 3 K units In compliance with 2002/95/EC european directive PowerFLAT(5x5) Description The PD54003L-E is a common source N-channel, enhancement-mode lateral field-effect RF power Figure 1. Pin configuration transistor. It is designed for high gain, broadband commercial and industrial application. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54003L-E boasts the excellent gain, linearity and reliability of STH1LV latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT. PD54003L-Es superior linearity performances makes it an ideal solution for car mobile radio. TOP VIEW Table 1. Device summary Order code Marking Package Packaging PD54003L-E 54003 PowerFLAT(5x5) Tape and reel May 2011 Doc ID 11957 Rev 3 1/11 www.st.com 11Contents PD54003L-E Contents Contents 2 1 Maximum ratings 3 2 Electrical specification . 4 3 Typical performances 5 3.1 Typical performance (broadband) 6 4 Package mechanical data . 7 5 Revision history . 10 2/11 Doc ID 11957 Rev 3