PD85004 STMicroelectronics

PD85004 RF power transistor the LdmoST plastic family Features Excellent thermal stability Common source configuration Broadband performances P = 4 W with 17 dB gain 870 MHz OUT Plastic package SOT-89 ESD protection Supplied in tape and reel In compliance with the 2002/95/EC european Figure 1. Pin connection directive Description Source The PD85004 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85004s superior gain and efficiency makes it an ideal solution for mobile radio. Source Gate Drain Table 1. Device summary Order code Marking Package Packaging PD85004 8504 SOT-89 Tape and reel August 2008 Rev 2 1/18 www.st.com 18Contents PD85004 Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 ESD protection characteristics 4 2.4 Moisture sensitivity level . 4 3 Impedances 5 4 DC curves . 6 5 RF curves 7 6 Schematic and BOM . 9 7 Demonstration board photo 11 8 Package mechanical data 12 8.1 Thermal pad and via design . 14 8.2 Soldering profile 15 9 Revision history . 17 2/18