X-On Electronics has gained recognition as a prominent supplier of PD54003-E RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. PD54003-E RF MOSFET Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

PD54003-E STMicroelectronics

PD54003-E electronic component of STMicroelectronics
PD54003-E STMicroelectronics
PD54003-E RF MOSFET Transistors
PD54003-E  Semiconductors

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See Product Specifications
Part No. PD54003-E
Manufacturer: STMicroelectronics
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors RF POWER transistor LDMOST family N-Chan
Datasheet: PD54003-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
400: USD 7.4125 ea
Line Total: USD 2965 
Availability - 0
MOQ: 400  Multiples: 400
Pack Size: 400
Availability Price Quantity
0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 400
Multiples : 400
400 : USD 7.4125

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 50
Multiples : 50
50 : USD 7.6343
100 : USD 7.3019
200 : USD 7.2631
250 : USD 7.2502
750 : USD 7.1856

0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 11.7752
10 : USD 10.2271
25 : USD 9.7565
100 : USD 8.4703
400 : USD 7.3618
1200 : USD 7.1736

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 2
Multiples : 1
2 : USD 9.0822
10 : USD 8.8643
25 : USD 8.776
100 : USD 7.7557
250 : USD 7.6005

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 2
Multiples : 1
2 : USD 9.0822
10 : USD 8.8643
25 : USD 8.776
100 : USD 7.7557
250 : USD 7.6005

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Series
Transistor Type
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
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We are delighted to provide the PD54003-E from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PD54003-E and other electronic components in the RF MOSFET Transistors category and beyond.

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PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet production data Features Excellent thermal stability Common source configuration P = 3 W with 12 dB gain 500 MHz OUT New RF plastic package PowerSO-10RF (formed lead) Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at PowerSO-10RF frequencies of up to 1 GHz. The device features (straight lead) the excellent gain, linearity and reliability of STs latest LDMOS technology, the PowerSO-10RF. The superior linearity performance makes it an Figure 1. Pin connection ideal solution for portable radios. The PowerSO- 10RF is the first true surface-mount device (SMD) Source plastic RF power package. It is based on the highly reliable PowerSO-10, the first ST- originated, JEDEC-approved, high-power SMD package. It has been optimized specifically for RF Drain requirements, and offers excellent RF Gate performance as well as ease of assembly. Table 1. Device summary Order code Package Packing PD54003-E PowerSO-10RF (formed lead) Tube PD54003TR-E PowerSO-10RF (formed lead) Tape and reel PD54003STR-E PowerSO-10RF (straight lead) Tape and reel June 2012 Doc ID 12235 Rev 4 1/24 This is information on a product in full production. www.st.com 24Contents PD54003-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 PD54003-E . 7 4.2 PD54003STR-E . 8 5 Test circuit 10 6 Circuit layout 12 7 Common source s-parameter 13 8 Package mechanical data 18 9 Revision history . 23 2/24 Doc ID 12235 Rev 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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