PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet production data Features Excellent thermal stability Common source configuration P = 3 W with 12 dB gain 500 MHz OUT New RF plastic package PowerSO-10RF (formed lead) Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at PowerSO-10RF frequencies of up to 1 GHz. The device features (straight lead) the excellent gain, linearity and reliability of STs latest LDMOS technology, the PowerSO-10RF. The superior linearity performance makes it an Figure 1. Pin connection ideal solution for portable radios. The PowerSO- 10RF is the first true surface-mount device (SMD) Source plastic RF power package. It is based on the highly reliable PowerSO-10, the first ST- originated, JEDEC-approved, high-power SMD package. It has been optimized specifically for RF Drain requirements, and offers excellent RF Gate performance as well as ease of assembly. Table 1. Device summary Order code Package Packing PD54003-E PowerSO-10RF (formed lead) Tube PD54003TR-E PowerSO-10RF (formed lead) Tape and reel PD54003STR-E PowerSO-10RF (straight lead) Tape and reel June 2012 Doc ID 12235 Rev 4 1/24 This is information on a product in full production. www.st.com 24Contents PD54003-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 PD54003-E . 7 4.2 PD54003STR-E . 8 5 Test circuit 10 6 Circuit layout 12 7 Common source s-parameter 13 8 Package mechanical data 18 9 Revision history . 23 2/24 Doc ID 12235 Rev 4