X-On Electronics has gained recognition as a prominent supplier of PD54008TR-E RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. PD54008TR-E RF MOSFET Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

PD54008TR-E STMicroelectronics

Name: PD54008TR-E
Brand: STMicroelectronics
SKU: PD54008TRE_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

PD54008TR-E electronic component of STMicroelectronics

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Part No.	PD54008TR-E
Manufacturer:	STMicroelectronics
Category:	RF MOSFET Transistors
Description:	RF MOSFET Transistors N-Ch, 25V 5A 3Pin Transistor, LDMOST
Datasheet:	PD54008TR-E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

600: USD 11.4302 ea
Line Total: USD 6858.12

Availability - 0

MOQ: 600 Multiples: 600
Pack Size: 600

PD54008TR-E More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 31 Jan to Thu. 06 Feb MOQ : 600 Multiples : 600	600 : USD 12.5562 3000 : USD 12.4388 6000 : USD 12.3225 9000 : USD 12.205 12000 : USD 12.0875 15000 : USD 11.9713 24000 : USD 11.8538 30000 : USD 11.735 45000 : USD 11.6175 75000 : USD 11.5

0 Ship by Fri. 31 Jan to Thu. 06 Feb MOQ : 600 Multiples : 600	600 : USD 11.4302

We are delighted to provide the PD54008TR-E from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PD54008TR-E and other electronic components in the RF MOSFET Transistors category and beyond.

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Additional Infomation About Product

PD54008-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 8 W with 11.5dB gain 500 MHz/7.5 V OUT New RF plastic package PowerSO-10RF (formed lead) Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs PowerSO-10RF latest LDMOS technology mounted in the first true (straight lead) SMD plastic RF power package, PowerSO-10RF. Devices superior linearity performance makes it an ideal solution for portable radio. Figure 1. Pin connection The PowerSO-10 plastic package, designed to Source offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Drain Gate Table 1. Device summary Order code Package Packing PD54008-E PowerSO-10RF (formed lead) Tube PD54008S-E PowerSO-10RF (straight lead) Tube PD54008TR-E PowerSO-10RF (formed lead) Tape and reel PD54008STR-E PowerSO-10RF (straight lead) Tape and reel May 2011 Doc ID 12271 Rev 3 1/29 www.st.com 29Contents PD54008-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 PD54008-E . 7 4.2 PD54008S-E 10 5 Test circuit 13 6 Circuit layout 15 7 Common source s-parameter 16 8 Package mechanical data 22 9 Revision history . 28 2/29 Doc ID 12271 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer STMicroelectronics STMicroelectronics
Product Category RF MOSFET Transistors RF MOSFET Transistors
RoHS - XON Y Y
Transistor Polarity N - Channel N - Channel
Technology Si Si
Id - Continuous Drain Current 5 A 5 A
Vds - Drain-Source Breakdown Voltage 25 V 25 V
Operating Frequency 1 GHz 1 GHz
Gain 11.5 Db At 500 Mhz 11.5 Db At 500 Mhz
Output Power 8 W 8 W
Configuration Single Single
Pd - Power Dissipation 73 W 73 W
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case POWERSO - 10RF (FORMED LEAD) POWERSO - 10RF (FORMED LEAD)
Packaging Reel Reel
Vgs - Gate-Source Voltage +/- 20 V +/- 20 V
Series Pd54008 Pd54008
Height 3.5 mm 3.5 mm
Length 7.5 mm 7.5 mm
Type Rf Power Mosfet Rf Power Mosfet
Width 9.4 mm 9.4 mm
Brand Stmicroelectronics Stmicroelectronics
Channel Mode Enhancement Enhancement
Factory Pack Quantity : 600 600