PTVA127002EV
Thermally-Enhanced High Power RF LDMOS FET
700 W, 50 V, 1200 1400 MHz
Description
The PTVA127002EV LDMOS FET is designed for use in power
PTVA127002EV
amplifier applications in the 1200 to 1400 MHz frequency band.
Package H-36275-4
Features include high gain and thermally-enhanced package with
bolt-down flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
Power Sweep, Pulsed RF
V = 50 V, I = 300 mA, T = 25C,
DD DQ CASE
Features
300 s pulse width, 12% duty cycle
Broadband input and output matching
High gain and efficiency
65 65
Integrated ESD protection
Output Power
Low thermal resistance
55 55
Excellent ruggedness
Pb-free and RoHS compliant
45 45
Capable of withstanding a 10:1 load mismatch
(all phase angles) at 700 W peak under RF pulse,
35 35
300 S, 10% duty cycle.
1200 MHz
25 25
1300 MHz
Efficiency
1400 MHz
15 a127002ev_g1-1 15
30 32 34 36 38 40 42 44 46 48
P (dBm)
IN
RF Characteristics
Pulsed RF Performance (tested in Infineon test fixture)
V = 50 V, I = 150 mA per side, P = 700 W, = 1200 MHz, = 1300 MHz, = 1400 MHz, 300 s pulse width,
DD DQ OUT 1 2 3
12% duty cycle
Characteristic Symbol Min Typ Max Unit
Gain G 15.5 16 dB
ps
Drain Efficiency h 50 56 %
D
Gain Flatness DG 1.0 1.3 dB
Return Loss IRL 20 11 dB
All published data at T = 25C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive deviceobserve handling precautions!
Data Sheet 1 of 11 Rev. 03.1, 2015-06-18
P (dBm)
OUT
Drain Efficiency (%) PTVA127002EV
RF Characteristics
Typical RF Performance (not subject to production test, veriefi d by design/characterization in Innfi eon test xfi ture)
V = 50 V, I = 150 mA per side, Input signal (t = 7 ns, t = 5 ns), 300 s pulse width, 12% duty cycle, class AB test
DD DQ r f
P P
1dB 3dB
Max
Mode of IRL t t
r (ns) f (ns)
P
droop (pulse)
Operation (MHz) (dB) Gain Eff P Gain Eff P @P @P
1dB 1dB
OUT OUT
@ P
1dB
(dB) (%) (W) (dB) (%) (W)
300 s, 12% 1200 20 16.6 57 710 14.6 57 810 0.2 5 <2
Duty Cycle
1300 16 15.8 54 840 13.8 55 950 0.3 5 <2
1400 20 15.7 54 730 13.7 53 820 0.2 5 <2
Typical RF Performance (tested on LTN/PTVA127002EV E5 Innfi eon test xfi ture)
V = 50 V, I = 150 mA per side, Input signal (t = 7 ns, t = 5 ns), 32 ms pulse width, 50% duty cycle, class AB test
DD DQ r f
Mode of Compression P Gain IRL I Eff P P
IN OUT OUT
Operation (MHz) (dBm) (dB) (dB) (A) (%) (dBm) (W)
32 ms, 50% P 1300 42.0 16.1 22.6 22.7 56.6 58.1 641
1dB
Duty Cycle
P 1300 44.4 14.1 19.0 25.2 55.8 58.5 703
3dB
DC Characteristics (single side)
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage V = 0 V, I = 10 mA V 105 V
GS DS (BR)DSS
Drain Leakage Current V = 50 V, V = 0 V I 1.0 A
DS GS DSS
V = 105 V, V = 0 V I 10.0 A
DS GS DSS
On-State Resistance V = 10 V, V = 0.1 V R 0.1 W
GS DS DS(on)
Operating Gate Voltage V = 50 V, I = 150 mA V 3 3.35 4 V
DS DQ GS
Gate Leakage Current V = 10 V, V = 0 V I 1.0 A
GS DS GSS
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V 105 V
DSS
Gate-Source Voltage V 6 to +12 V
GS
Junction Temperature T 200 C
J
Storage Temperature Range T 65 to +150 C
STG
Thermal Resistance (T = 70C, 700 W CW) R ~0.36 C/W
CASE qJC
Data Sheet 2 of 11 Rev. 03.1, 2015-06-18