LET9060 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features Excellent thermal stability Common source configuration P = 60 W with 17.2 dB gain 960 MHz / OUT 28 V New RF plastic package PowerSO-10RF (formed lead) Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the PowerSO-10RF excellent gain, linearity and reliability of STs (straight lead) latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET9060s superior linearity performance makes Figure 1. Pin connection it an ideal solution for base station applications. Source The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers Drain excellent RF performances and ease of assembly. Gate Table 1. Device summary Order codes Packages Marking Packaging LET9060 PowerSO-10RF (formed lead) LET9060 Tube LET9060S PowerSO-10RF (straight lead) LET9060S Tube LET9060TR PowerSO-10RF (formed lead) LET9060 Tape and reel LET9060STR PowerSO-10RF (straight lead) LET9060S Tape and reel February 2011 Doc ID 010019 Rev 1 1/11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 11 change without notice.Maximum ratings LET9060 1 Maximum ratings T = 25 C. CASE Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 80 V (BR)DSS V Gate-source voltage -0.5 to +15 V GS I Drain current 12 A D P Power dissipation ( T = 70 C) 95 W DISS C T Max. operating junction temperature 165 C J T Storage temperature -65 to +150 C STG Table 3. Thermal data Symbol Parameter Value Unit R Junction-case thermal resistance 1.0 C/W thJC 2/11 Doc ID 010019 Rev 1