LET20045C STMicroelectronics

LET20045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P ( 28 V)= 54 W with 13.3 dB gain OUT 2000 MHz P ( 36 V)= 65 W with 12.5 dB gain OUT 2000 MHz BeO free package M243 epoxy sealed In compliance with the 2002/95/EC European directive Figure 1. Pin out Description The LET20045C is a common source n-channel enhancement-mode lateral field-effect RF power 1 transistor designed for broadband commercial and industrial applications at frequencies up to 3 2.0 GHz. The LET20045C is designed for high gain and broadband performance operating in 2 common source mode at 36 V. It is ideal for base station applications requiring high linearity. 1. Drain 3. Source 2. Gate Table 1. Device summary Order code Package Branding LET20045C M243 LET20045C July 2011 Doc ID 022024 Rev 1 1/9 www.st.com 9Maximum ratings LET20045C 1 Maximum ratings Table 2. Absolute maximum ratings (T = 25 C) CASE Symbol Parameter Value Unit V Drain-source voltage 80 V (BR)DSS V Gate-source voltage -0.5 to +15 V GS I Drain current 12 A D P Power dissipation ( T = 70 C) 130 W DISS C T Max. operating junction temperature 200 C J T Storage temperature -65 to +150 C STG Table 3. Thermal data Symbol Parameter Value Unit R Junction-case thermal resistance 1.0 C/W th(JC) 2/9 Doc ID 022024 Rev 1