LET9045 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features Excellent thermal stability Common source configuration P = 45 W with 18.5 dB gain 960 MHz / OUT 28 V Plastic package PowerSO-10RF (formed lead) ESD protection In compliance with the 2002/95/EC european directive Description The LET9045 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband PowerSO-10RF commercial and industrial applicatios. It operates (straight lead) at 28 V in common source mode at frequencies of up to 1 GHz. LET9045 boasts the excellent gain, linearity and reliability of STs latest LDMOS Figure 1. Pin connection technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET9045s Source superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to Drain offer high reliability, is the first ST JEDEC Gate approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Table 1. Device summary Order codes Packages Packaging LET9045 PowerSO-10RF (formed lead) Tube LET9045S PowerSO-10RF (straight lead) Tube LET9045TR PowerSO-10RF (formed lead) Tape and reel LET9045STR PowerSO-10RF (straight lead) Tape and reel April 2009 Rev 1 1/12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 12 change without noticeContents LET9045 Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 ESD protection characteristics 4 2.4 Moisture sensitivity level . 4 3 Package mechanical data . 5 4 Revision history . 10 2/12