VRF2944 VRF2944MP 50V, 400W, 150MHz RF POWER VERTICAL MOSFET D The VRF2944 is a gold-metallized silicon n-channel RF power transistor de- signed for broadband commercial and military applications requiring high power S S and gain without compromising reliability, ruggedness, or inter-modulation distortion. M177 G FEATURES 70:1 Load VSWR Capability at Specified Operating Conditions Improved Ruggedness V = 170V (BR)DSS Nitride Passivated 400W with 22dB Typ. Gain 30MHz, 50V Excellent Stability & Low IMD Refractory Gold Metallization Common Source Configuration Higher Power Version of VRF2933 Available in Matched Pairs Thermally Enhanced Package RoHS Compliant Maximum Ratings All Ratings: T =25C unless otherwise specified C Symbol Parameter VRF2933(MP) Unit V Drain-Source Voltage 170 V DSS I Continuous Drain Current T = 25C 50 A D C V Gate-Source Voltage 40 V GS P D Total Device dissipation T = 25C 795 W C T Storage Temperature Range -65 to 150 STG C T Operating Junction Temperature Max 200 J Static Electrical Characteristics Symbol Parameter Min Typ Max Unit V Drain-Source Breakdown Voltage (V = 0V, I = 100mA) 170 180 (BR)DSS GS D V V On State Drain Voltage (I = 25A, V = 10V) 2.0 2.4 DS(ON) D(ON) GS I Zero Gate Voltage Drain Current (V = 100V, V = 0V) 2.0 mA DSS DS GS I Gate-Source Leakage Current (V = 20V, V = 0V) 2.0 A GSS DS DS g Forward Transconductance (V = 10V, I = 20A) 10 mhos fs DS D V Gate Threshold Voltage (V = 10V, I = 100mA) 2.9 3.6 4.4 V GS(TH) DS D Thermal Characteristics Symbol Characteristic Min Typ Max Unit R Junction to Case Thermal Resistance 0.22 C/W JC CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - Dynamic Characteristics VRF2944(MP) Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 1050 ISS GS C Output Capacitance V = 50V 520 pF oss DS C Reverse Transfer Capacitance f = 1MHz 62 rss Functional Characteristics Symbol Parameter Min Typ Max Unit G f = 30MHz, V = 50V, I = 250mA, P = 400W 23 25 dB PS 1 DD DQ out f = 30MHz, V = 50V, I = 250mA, P = 400W 50 % D 1 DD DQ out f = 30MHz, V = 50V, I = 250mA, P = 400W CW DD DQ out No Degradation in Output Power 70:1 VSWR - All Phase Angles, 0.2mSec X 20% Duty Factor Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 90 100 250s PULSE TEST<0.5 % DUTY 80 CYCLE 8.0V 80 70 T = -55C J 60 7.0V T = 25C J 60 50 6.5V T = 125C 40 J 6.0V 40 30 5.5V 5.0V 20 20 4.5V 10 4V 0 0 0 5 10 15 20 25 30 0 2 4 6 8 10 12 V , DRAIN-TO-SOURCE VOLTAGE (V) V , GATE-TO-SOURCE VOLTAGE (V) DS(ON) GS FIGURE 1, Output Characteristics FIGURE 2, Transfer Characteristics 10,000 500 100 100s C iss 1000 C oss I DMax 1ms R ds(on) 10 10ms 100 PD Max C rss DC line T = 125C J T = 75C C 10 1 1 10 100 500 0 10 20 30 40 50 60 70 80 90 100 V , DRAIN-TO-SOURCE VOLTAGE (V) V , DRAIN-TO-SOURCE VOLTAGE (V) DS DS FIGURE 3, Capacitance vs Drain-to-Source Voltage FIGURE 4, Forward Safe Operating Area 050-4968 Rev C 10-2020 C, CAPACITANCE (pF) I , DRAIN CURRENT (A) D I , DRAIN CURRENT (A) I , DRAIN CURRENT (A) D D BVdss Line