VRF2933, VRF2933MP 50 V, 300 W, 150 MHz RF Power MOSFET Product Overview The VRF2933(MP) is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter- modulation distortion. Adding MP at the end of part number specifies a matched pair where V is matched GS(TH) between the two parts. Features Improved ruggedness V = 170 V (BR)DSS 300 W with 22 dB typical gain at 30 MHz, 50 V Excellent stability and low IMD Common source conguration Available in matched pairs (VRF2933MP) 70:1 load VSWR capability at specied operating conditions Nitride passivated Refractory gold metallization High voltage replacement for SD2933 Thermally enhanced package RoHS compliant Datasheet DS00004434A-page 1 2022 Microchip Technology Inc. and its subsidiaries VRF2933, VRF2933MP Device Specifications 1. Device Specifications This section shows the specifications of the VRF2933(MP) device. 1.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings of the VRF2933(MP) device. T = 25 C unless otherwise C specified. Table 1-1. Absolute Maximum Ratings Symbol Parameter Ratings Unit V Drain source voltage 170 V DSS I Continuous drain current 42 A D V Gate-source voltage 40 V GS P Total power dissipation 648 W D T Storage temperature range 65 to 150 C STG T Operating junction temperature 200 J 1.2 Electrical Performance The following table shows the static characteristics of the VRF2933(MP) device. T = 25 C unless otherwise C specified. Table 1-2. Static Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Drain-source breakdown voltage V = 0 V, I = 100 mA 170 180 V (BR)DSS GS D V On-state drain voltage I = 20 A, V = 10 V 2.1 2.4 DS(ON) D(ON) GS I Zero gate voltage drain current V = 100 V, V = 0 V 2.0 mA DSS DS GS I Gate-source leakage current V = 20 V, V = 0 V 2.0 A GSS DS DS g Forward transconductance V = 10 V, I = 20 A 8 mhos fs DS D V Gate-source threshold voltage V = 10 V, I = 100 mA 2.9 3.6 4.4 V GS(th) DS D The following table shows the thermal characteristics of the VRF2933(MP) device. Table 1-3. Thermal Characteristics Symbol Characteristic Min Typ Max Unit R Junction-to-case thermal resistance 0.27 C/W JC Note: These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed. The following table shows the dynamic characteristics of the VRF2933(MP) device. T = 25 C unless otherwise C specified. DS00004434A-page 2 Datasheet 2022 Microchip Technology Inc. and its subsidiaries