VRF151G 50V, 300W, 175MHz RF POWER VERTICAL MOSFET The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband perfor- mance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. FEATURES 5:1 Load VSWR Capability at Speci ed Operating Conditions Improved Ruggedness V = 170V (BR)DSS Nitride Passivated 300W with 16dB Typical Gain 175MHz, 50V Excellent Stability & Low IMD Refractory Gold Metallization Common Source Con guration High Voltage Replacement for MRF151G RoHS Compliant Maximum Ratings All Ratings: T =25C unless otherwise speci ed C Symbol Parameter VRF151G Unit V Drain-Source Voltage 170 V DSS I Continuous Drain Current T = 25C 36 A D C V Gate-Source Voltage 40 V GS P D Total Device dissipation T = 25C 500 W C T Storage Temperature Range -65 to 150 STG C T Operating Junction Temperature 200 J Static Electrical Characteristics Symbol Parameter Min Typ Max Unit V Drain-Source Breakdown Voltage (V = 0V, I = 100mA) 170 180 (BR)DSS GS D V V On State Drain Voltage (I = 10A, V = 10V) 2.0 3.0 DS(ON) D(ON) GS I Zero Gate Voltage Drain Current (V = 100V, V = 0V) 1.0 mA DSS DS GS I Gate-Source Leakage Current (V = 20V, V = 0V) 1.0 A GSS DS DS g Forward Transconductance (V = 10V, I = 10A) 5.0 mhos fs DS D V Gate Threshold Voltage (V = 10V, I = 100mA) 2.9 3.6 4.4 V GS(TH) DS D Thermal Characteristics Symbol Characteristic Min Typ Max Unit Junction to Case Thermal Resistance 0.35 C/W R JC CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - Dynamic Characteristics VRF151G Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 375 ISS GS C Output Capacitance V = 50V 200 pF oss DS C Reverse Transfer Capacitance f = 1MHz 12 rss Functional Characteristics Symbol Parameter Min Typ Max Unit G f = 175MHz,- V = 50V, I = 500mA, P = 300W 14 16 dB PS DD DQ out f = 175MHz, V = 50V, I = 500mA, P = 300W 50 55 % D DD DQ out f = 175MHz, V = 50V, I = 500mA, P = 300W 5:1VSWR - All Phase Angles No Degradation in Output Power DD DQ out 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the speci cations and information contained herein. Typical Performance Curves 25 30 250 s PULSE TEST<0.5 % DUTY CYCLE 14V 25 10V 20 9V T = -55C J 8V 20 7V 15 T = 25C J 15 6V T = 125C 10 J 10 5V 5 5 V = 4V GS 0 0 0 2 4 6 8 10 12 0 5 10 15 20 25 V , DRAIN-TO-SOURCE VOLTAGE (V) V , GATE-TO-SOURCE VOLTAGE (V) DS(ON) GS FIGURE 1, Output Characteristics FIGURE 2, Transfer Characteristics 1.0E 9 100 C iss C oss I DMax 1.0E 10 10 R ds(on) PD Max T = 125C J C T = 75C rss C 1.0E 11 1 0 10 20 30 40 50 60 1 10 100 250 V , DRAIN-TO-SOURCE VOLTAGE (V) V , DRAIN-TO-SOURCE VOLTAGE (V) DS DS FIGURE 3, Capacitance vs Drain-to-Source Voltage FIGURE 4, Forward Safe Operating Area 050-4938 Rev G 11-2009 C, CAPACITANCE (F) I , DRAIN CURRENT (A) D I , DRAIN CURRENT (A) I , DRAIN CURRENT (A) D D