VRF141, VRF141MP 28 V, 150 W, 175 MHz RF Power MOSFET Product Overview The VRF141(MP) is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. Features Improved ruggedness V = 80 V (BR)DSS 150 W with 22 dB typical gain at 30 MHz, 28 V 150 W with 13 dB typical gain at 175 MHz, 28 V Excellent stability and low IMD Common source conguration Available in matched pairs (VRF141MP) 30:1 load VSWR capability at specied operating conditions Nitride passivated Refractory gold metallization High voltage replacement for MRF141 RoHS compliant Datasheet DS-00004329A-page 1 2021 Microchip Technology Inc. and its subsidiaries VRF141, VRF141MP Device Specifications 1. Device Specifications This section shows the specifications of the VRF141(MP) device. 1.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings of the VRF141(MP) device. T = 25 C unless otherwise C specified. Table 1-1. Absolute Maximum Ratings Symbol Parameter Ratings Unit V Drain source voltage 80 V DSS I Continuous drain current at T = 25 C 20 A D C V Gate-source voltage 40 V GS P Total power dissipation at T = 25 C 300 W D C T Storage temperature range 65 to 150 C STG T Operating junction temperature 200 J 1.2 Electrical Performance The following table shows the static characteristics of the VRF141(MP) device. T = 25 C unless otherwise C specified. Table 1-2. Static Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Drain-source breakdown voltage V = 0 V, I = 100 mA 80 V (BR)DSS GS D V On-state drain voltage I = 10 A, V = 10 V 1.0 1.4 DS(ON) D(ON) GS I Zero gate voltage drain current V = 60 V, V = 0 V 1.0 mA DSS DS GS I Gate-source leakage current V = 20 V, V = 0 V 1.0 A GSS DS GS g Forward transconductance V = 10 V, I = 5 A 5.0 mhos fs DS D V Gate-source threshold voltage V = 10 V, I = 100 mA 2.9 3.6 4.4 V GS(th) DS D The following table shows the thermal characteristics of the VRF141(MP) device. Table 1-3. Thermal Characteristics Symbol Characteristic Min Typ Max Unit R Junction-to-case thermal resistance 0.60 C/W JC The following table shows the dynamic characteristics of the VRF141(MP) device. T = 25 C unless otherwise C specified. DS-00004329A-page 2 Datasheet 2021 Microchip Technology Inc. and its subsidiaries