VRF151 VRF151MP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor de- signed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation M174 distortion. FEATURES 70:1 Load VSWR Capability at Specified Operating Conditions Improved Ruggedness V = 170V (BR)DSS Nitride Passivated 150W with 22dB Typical Gain 30MHz, 50V 150W with 14dB Typical Gain 175MHz, 50V Refractory Gold Metallization Excellent Stability & Low IMD High Voltage Replacement for MRF151 Common Source Configuration RoHS Compliant Available in Matched Pairs Maximum Ratings All Ratings: T =25C unless otherwise specified C Symbol Parameter VRF151(MP) Unit V Drain-Source Voltage 170 V DSS I Continuous Drain Current T = 25C 16 A D C V Gate-Source Voltage 40 V GS P D Total Device dissipation T = 25C 300 W C T Storage Temperature Range -65 to 150 STG C T Operating Junction Temperature 200 J Static Electrical Characteristics Symbol Parameter Min Typ Max Unit V Drain-Source Breakdown Voltage (V = 0V, I = 100mA) 170 180 (BR)DSS GS D V V DS(ON) On State Drain Voltage (I = 10A, V = 10V) 2.0 3.0 D(ON) GS I Zero Gate Voltage Drain Current (V = 100V, V = 0V) 1 mA DSS DS GS I Gate-Source Leakage Current (V = 20V, V = 0V) 1.0 A GSS GS DS g Forward Transconductance (V = 10V, I = 5A) 5.0 mhos fs DS D V Gate Threshold Voltage (V = 10V, I = 100mA) 2.9 3.6 4.4 V GS(TH) DS D Thermal Characteristics Symbol Characteristic Min Typ Max Unit R Junction to Case Thermal Resistance 0.60 C/W JC CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - Dynamic Characteristics VRF151(MP) Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 375 ISS GS C Output Capacitance V = 150V 200 pF oss DS C Reverse Transfer Capacitance f = 1MHz 12 rss Functional Characteristics Symbol Parameter Min Typ Max Unit 1 G f = 30MHz, f = 30.001MHz, V = 50V, I = 250mA, P = 150W 18 22 PS 1 2 DD DQ out PEP dB G f = 175MHz, V = 50V, I = 250mA, P = 150W 14 PS DD DQ out f = 30MHz, f = 30.001MHz, V = 50V, I = 250mA, P = 150W 50 % D 1 2 DD DQ out PEP 1 1 IMD f = 30MHz, f = 30.001MHz, V = 50V, I = 250mA, P = 150W -30 dBc (d3) 1 2 DD DQ out PEP f = 50MHz, V = 50V, I = 250mA, P = 150W CW 1 DD DQ out No Degradation in Output Power 70:1 VSWR - All Phase Angles , 0.2mSec X 20% Duty Factor 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 25 30 250s PULSE 14V TEST<0.5 % DUTY CYCLE 10V 25 20 9V T = -55C J 20 7V 8V 15 T = 25C J 15 T = 125C J 6V 10 10 5V 5 5 4V 0 0 0 4 8 12 16 20 0 2 4 6 8 10 12 V , DRAIN-TO-SOURCE VOLTAGE (V) V , GATE-TO-SOURCE VOLTAGE (V) DS(ON) GS FIGURE 1, Output Characteristics FIGURE 2, Transfer Characteristics 100 20 10 C iss Pdmax I DMax C oss R 10 ds(on) DC line 1 T = 125C J C rss T = 75C C 1 0.1 0 10 20 30 40 50 1 10 100 250 V , DRAIN-TO-SOURCE VOLTAGE (V) V , DRAIN-TO-SOURCE VOLTAGE (V) DS DS FIGURE 3, Capacitance vs Drain-to-Source Voltage FIGURE 4, Forward Safe Operating Area 050-4937 Rev G 12-2013 C, CAPACITANCE (pF) I , DRAIN CURRENT (A) D I , DRAIN CURRENT (A) I , DRAIN CURRENT (V) D D