VRF141G Microchip

VRF141G 28 V, 300 W, 175 MHz Dual RF Power MOSFET Product Overview The VRF141G is designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. Features Improved ruggedness V = 80 V (BR)DSS 300 W with 14 dB typical gain at 175 MHz, 28 V Excellent stability and low IMD Common source push-pull conguration 5:1 load VSWR capability at specied operating conditions Nitride passivated Refractory gold metallization High voltage replacement for MRF141G RoHS compliant Datasheet DS-00004328A-page 1 2021 Microchip Technology Inc. and its subsidiaries VRF141G Device Specifications 1. Device Specifications This section shows the specifications of the VRF141G device. 1.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings of the VRF141G device. T = 25 C unless otherwise C specified. Table 1-1. Absolute Maximum Ratings Symbol Parameter Ratings Unit V Drain source voltage 80 V DSS I Continuous drain current 40 A D V Gate-source voltage 40 V GS P Total power dissipation 500 W D T Storage temperature range 65 to 150 C STG T Operating junction temperature 200 J 1.2 Electrical Performance The following table shows the static characteristics of the VRF141G device. T = 25 C unless otherwise specified. C Table 1-2. Static Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Drain-source breakdown voltage V = 0 V, I = 100 mA 80 90 V (BR)DSS GS D V On-state drain voltage I = 10 A, V = 10 V 1.0 1.4 DS(ON) D(ON) GS I Zero gate voltage drain current V = 60 V, V = 0 V 1.0 mA DSS DS GS I Gate-source leakage current V = 20 V, V = 0 V 1.0 A GSS DS DS g Forward transconductance V = 10 V, I = 5 A 5.0 mhos fs DS D V Gate-source threshold voltage V = 10 V, I = 100 mA 2.9 3.6 4.4 V GS(th) DS D The following table shows the thermal characteristics of the VRF141G device. Table 1-3. Thermal Characteristics Symbol Characteristic Min Typ Max Unit R Junction-to-case thermal resistance 0.35 C/W JC Note: These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed. The following table shows the dynamic characteristics of the VRF141G device. T = 25 C unless otherwise C specified. DS-00004328A-page 2 Datasheet 2021 Microchip Technology Inc. and its subsidiaries