BLL6H1214L-250,112 NXP

BLL6H1214L-250 BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 4 1 September 2015 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at T =25 C t = 300 s = 10 % I = 100 mA in a class-AB case p Dq production test circuit. Mode of operation f V P G t t DS L p D r f (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1.2 to 1.4 50 250 17 55 15 5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an I of 100 mA, a t of 300 s with of 10 %: Dq p Output power = 250 W Power gain = 17 dB Efficiency = 55 % Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1.2 GHz to 1.4 GHz) Internally matched for ease of use Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/ECBLL6H1214L(S)-250 LDMOS L-band radar power transistor 1.3 Applications L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLL6H1214L-250 (SOT502A) 1drain 1 2gate 1 1 3 3source 2 2 3 sym112 BLL6H1214LS-250 (SOT502B) 1drain 1 2gate 1 1 3 3source 2 2 3 sym112 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLL6H1214L-250 - flanged LDMOST ceramic package 2 mounting SOT502A holes 2 leads BLL6H1214LS-250 - earless flanged LDMOST ceramic package 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 100 V DS V gate-source voltage 0.5 +13 V GS I drain current - 42 A D T storage temperature 65 +150 C stg T junction temperature - 200 C j BLL6H1214L-250 1214LS-250 4 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 1 September 2015 2 of 13