X-On Electronics has gained recognition as a prominent supplier of BLT50,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BLT50,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BLT50,115 NXP

BLT50,115 electronic component of NXP
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See Product Specifications
Part No.BLT50,115
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: Transistors RF Bipolar TAPE-7 TNS-RFPR
Datasheet: BLT50,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1000
Multiples : 1000
1000 : USD 1.3575
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.5502
10 : USD 2.1622
100 : USD 1.7325
500 : USD 1.5177
1000 : USD 1.3263
2000 : USD 1.3263
5000 : USD 1.3263
10000 : USD 1.2737
25000 : USD 1.2316
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Technology
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
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Configuration
Type
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BLT50,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLT50,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor April 1991 Product specicationPhilips Semiconductors Product specication UHF power transistor BLT50 FEATURES QUICK REFERENCE DATA RF performance at T 60 C in a common emitter class-B test circuit s SMD encapsulation (note 1). Gold metallization ensures excellent reliability. MODE OF OPERATION f (MHz) V (V) P (W) G (dB) (%) CE L p c c.w. narrow band 470 7.5 1.2 > 10 > 55 DESCRIPTION Note NPN silicon planar epitaxial transistor 1. T = temperature at soldering point of collector tab. s encapsulated in a SOT223 surface mounted envelope and designed PIN CONFIGURATION primarily for use in hand-held radio equipment in the 470 MHz communications band. age 4 PINNING - SOT223 c PIN DESCRIPTION handbook, halfpage b 1 emitter 2 base e MBB012 3 emitter 123 4 collector MSB002 - 1 Top view Fig.1 Simplified outline and symbol. April 1991 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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