BLS6G3135-20,112 NXP

BLS6G3135-20 BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 5 1 September 2015 Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at T =25 C t = 300 s = 10 % I = 50 mA in a class-AB case p Dq production test circuit. Mode of operation f V P G t t DS L p D r f (GHz) (V) (W) (dB) (%) (ns) (ns) Pulsed RF 3.1 to 3.5 32 20 15.5 45 20 10 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an I of 50 mA, a t of 300 s and a of 10 %: Dq p Output power = 20 W Power gain = 15.5 dB Efficiency = 45 % Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (3.1 GHz to 3.5 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)BLS6G3135-20 BLS6G3135S-20 LDMOS S-Band radar power transistor 1.3 Applications S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLS6G3135-20 (SOT608A) 1drain 1 1 2gate 1 3source 2 3 3 2 sym112 BLS6G3135S-20 (SOT608B) 1drain 1 1 2gate 1 3 3source 2 3 2 sym112 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLS6G3135-20 - flanged ceramic package 2 mounting holes 2 leads SOT608A BLS6G3135S-20 - ceramic earless flanged package 2 leads SOT608B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 60 V DS V gate-source voltage 0.5 +13 V GS I drain current - 2.1 A D T storage temperature 65 +150 C stg T junction temperature - 225 C j BLS6G3135-20 6G3135S-20 5 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 5 1 September 2015 2 of 13