BF1101WR,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BF1101 BF1101R BF1101WR N-channel dual-gate MOS-FETs Product specification 1999 May 14 Supersedes data of 1999 Feb 01NXP Semiconductors Product specification BF1101 BF1101R N-channel dual-gate MOS-FETs BF1101WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 3 4 forward transfer admittance to input 1source capacitance ratio 2drain Low noise gain controlled amplifier 3 gate 2 up to 1 GHz 2 1 4 gate 1 Partly internal self-biasing circuit to Top view MSB035 ensure good cross-modulation performance during AGC and good BF1101R marking code: NCp. DC stabilization. Fig.2 Simplified outline APPLICATIONS (SOT143R). VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional communications equipment. handbook, 2 columns4 3 3 4 , halfpage DESCRIPTION Enhancement type N-channel field-effect transistor with source and 12 21 substrate interconnected. Integrated Top view MSB014 Top view MSB842 diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101 marking code: NDp. BF1101WR marking code: NC. BF1101R and BF1101WR are encapsulated in the SOT143B, Fig.1 Simplified outline Fig.3 Simplified outline SOT143R and SOT343R plastic (SOT143B). (SOT343R). packages respectively. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 7V DS I drain current 30 mA D P total power dissipation 200 mW tot y forward transfer admittance 25 30 mS fs C input capacitance at gate 1 2.2 2.7 pF ig1-ss C reverse transfer capacitance f = 1 MHz 25 35 fF rss F noise figure f = 800 MHz 1.7 2.5 dB X cross-modulation input level for k = 1% at 100 dBV mod 40 dB AGC T operating junction temperature 150 C j CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 1999 May 14 2