X-On Electronics has gained recognition as a prominent supplier of BF1108R,215 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BF1108R,215 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BF1108R,215 NXP

BF1108R,215 electronic component of NXP
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See Product Specifications
Part No.BF1108R,215
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Transistors RF MOSFET TAPE7 MOS-RFSS
Datasheet: BF1108R,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.3705
6000 : USD 0.3517
9000 : USD 0.3328
12000 : USD 0.314
15000 : USD 0.3014
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.858
10 : USD 0.7579
25 : USD 0.6857
100 : USD 0.5999
250 : USD 0.527
500 : USD 0.4647
1000 : USD 0.3796
3000 : USD 0.351
6000 : USD 0.3341
N/A

Obsolete
   
Manufacturer
Product Category
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Configuration
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Package Case
Brand
Gate Source Breakdown Voltage
Rds On
Factory Pack Quantity :
Rohs Mouser
Height
Length
Type
Width
Number Of Channels
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vgs Th - Gate-Source Threshold Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BF1108R,215 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BF1108R,215 and other electronic components in the RF MOSFET Transistors category and beyond.

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BF1108 BF1108R Silicon RF switches Rev. 04 29 May 2008 Product data sheet 1. Product prole 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Specially designed for low loss RF switching up to 1 GHz 1.3 Applications n Various RF switching applications such as: u Passive loop through for VCR tuner u Transceiver switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit 1 L on-state insertion loss R =R =50 f 1 GHz -- 2 dB ins(on) S L V =V =0V I =0mA SK DK F ISL off-state isolation R =R =50 f 1 GHz 30 --dB off S L V =V =5V I =1mA SK DK F R drain-source on-state V =0V I = 1 mA - 12 20 DSon KS D resistance V gate-source pinch-off V =1V I =20 A- - 3 -4V GS(p) DS D voltage 1 I = diode forward current. FBF1108 BF1108R NXP Semiconductors Silicon RF switches 2. Pinning information Table 2. Pinning Pin Description Simplied outline Graphic symbol BF1108 (SOT143B) 1 FET gate diode anode 4 3 43 2 diode cathode 1 3 source 1 4 drain 12 1 2 001aai042 BF1108R (SOT143R) 1 FET gate diode anode 3 4 34 2 diode cathode 1 3 source 1 4 drain 21 21 001aai043 1 Drain and source are interchangeable. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BF1108 - plastic surface-mounted package 4 leads SOT143B BF1108R - plastic surface-mounted package reverse pinning SOT143R 4 leads 4. Marking Table 4. Marking Type number Marking code BF1108 NGp BF1108R NHp BF1108 BF1108R 4 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 29 May 2008 2 of 10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
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PH3
PHI
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