BF1205C,115 NXP

BF1205C Dual N-channel dual gate MOS-FET Rev. 3 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Two low noise gain controlled amplifiers in a single package; one with a fully integrated bias and one with a partly integrated bias Internal switch to save external components Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio. 1.3 Applications Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage digital and analog television tuners professional communication equipment.BF1205C NXP Semiconductors Dual N-channel dual gate MOS-FET 1.4 Quick reference data Table 1. Quick reference data Per MOS-FET unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage - - 6 V DS I drain current (DC) - - 30 mA D [1] P total power dissipation T 107 C - - 180 mW tot sp y forward transfer admittance f = 1 MHz fs amplifier a; I =19mA 26 31 41 mS D amplifier b; I =13mA 28 33 43 mS D C input capacitance at gate 1 f = 1 MHz ig1-ss amplifier a - 2.2 2.7 pF amplifier b - 2.0 2.5 pF C reverse transfer capacitance f = 1 MHz - 20 - fF rss NF noise figure amplifier a; f = 400 MHz - 1.3 1.9 dB amplifier b; f = 800 MHz - 1.4 2.1 dB X cross-modulation input level for k = 1 % at mod 40 dB AGC amplifier a 100 105 - dB V amplifier b 100 103 - dB V T junction temperature - - 150 C j [1] T is the temperature at the soldering point of the source lead. sp 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Symbol 1 gate 1 (a) 6 5 4 2gate2 AMP a G1 D 3 gate 1 (b) (A) (A) 4drain(b) 5source G2 S 1 2 3 6drain(a) 001aaa706 G1 D (B) (B) AMP b sym033 BF1205C All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 7 September 2011 2 of 23