X-On Electronics has gained recognition as a prominent supplier of BF1206F,115 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BF1206F,115 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BF1206F,115 NXP

BF1206F,115 electronic component of NXP
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See Product Specifications
Part No.BF1206F,115
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Trans RF MOSFET N-CH 6V 0.03A 6-Pin SOT-666 T/R
Datasheet: BF1206F,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

42: USD 0.8598 ea
Line Total: USD 36.11

Availability - 0
MOQ: 42  Multiples: 1
Pack Size: 1
   
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Id - Continuous Drain Current
Pd - Power Dissipation
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We are delighted to provide the BF1206F,115 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BF1206F,115 and other electronic components in the RF MOSFET Transistors category and beyond.

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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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BF1206F Dual N-channel dual gate MOSFET Rev. 2 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Two low noise gain controlled amplifiers in a single package Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio Suited for 3 volt applications 1.3 Applications Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High Frequency (UHF) applications with 3 V supply voltage, such as digital and analog television tuners SOT666BF1206F NXP Semiconductors Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1. Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage (DC) - - 6 V DS I drain current (DC) - - 30 mA D y forward transfer admittance I =4mA fs D amplifier A 17 22 32 mS amplifier B 17 22 32 mS C input capacitance at gate1 I = 4 mA f = 100 MHz iss(G1) D amplifier A - 2.4 2.9 pF amplifier B - 1.7 2.2 pF NF noise figure I = 4 mA D amplifier A f = 400 MHz - 1.0 1.6 dB amplifier B f = 800 MHz - 1.0 1.6 dB Xmod cross modulation input level for k = 1 % at 40 dB AGC amplifier A 92 97 - dB V amplifier B 93 98 - dB V 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Symbol 1 gate1 (AMP A) 6 5 4 AMP A 2source G1A G2 3 gate1 (AMP B) 4 drain (AMP B) S DA 5 drain (AMP A) AMP B 12 3 G1B DB 6 gate2 sym111 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BF1206F - plastic surface mounted package 6 leads SOT666 BF1206F All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 7 September 2011 2 of 21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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