X-On Electronics has gained recognition as a prominent supplier of BF908WR,115 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BF908WR,115 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BF908WR,115 NXP

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Part No.	BF908WR,115
Manufacturer:	NXP
Category:	RF MOSFET Transistors
Description:	RF MOSFET Transistors N-CH DUAL GATE 12V VHFUHF
Datasheet:	BF908WR,115 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3000: USD 0.162 ea
Line Total: USD 486

Availability - 0

MOQ: 3000 Multiples: 1
Pack Size: 1

BF908WR,115 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 11 Mar to Mon. 17 Mar MOQ : 3000 Multiples : 1	3000 : USD 0.162 6000 : USD 0.1608

We are delighted to provide the BF908WR,115 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BF908WR,115 and other electronic components in the RF MOSFET Transistors category and beyond.

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET Preliminary specification 1995 Apr 25NXP Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING High forward transfer admittance PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b source admittance to input capacitance ratio 2 d drain Low noise gain controlled amplifier up to 1 GHz. 3g gate 2 2 4g gate 1 1 APPLICATIONS VHF and UHF applications with 12 V supply voltage, such as television tuners and professional d communications equipment. 34 g 2 DESCRIPTION g 1 Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by 21 integrated back-to-back diodes between gates and s,b source. Top view MAM198 CAUTION Marking code: MD. The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline (SOT343R) and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 12 V DS I drain current 40 mA D P total power dissipation 300 mW tot T operating junction temperature 150 C j y forward transfer admittance 36 43 50 mS fs C input capacitance at gate 1 2.4 3.1 4 pF ig1-s C reverse transfer capacitance f = 1 MHz 20 30 45 fF rs F noise figure f = 800 MHz 1.5 2.5 dB 1995 Apr 25 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

FR9 may also be referenced as

Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category RF MOSFET Transistors RF MOSFET Transistors
RoHS - XON Y Y
Transistor Polarity N - Channel N - Channel
Technology Si Si
Id - Continuous Drain Current 40 mA , 40 mA 40 mA , 40 mA
Vds - Drain-Source Breakdown Voltage 12 v , 12 V 12 v , 12 V
Rds On - Drain-Source Resistance - -
Pd - Power Dissipation 300 mW 300 mW
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 343R - 4 SOT - 343R - 4
Packaging Reel Reel
Transistor Type Mosfet Mosfet
Brand Nxp Semiconductors Nxp Semiconductors
Product Type Rf Mosfet Small Signal Rf Mosfet Small Signal
Factory Pack Quantity : 3000 3000
Vgs - Gate-Source Breakdown Voltage 20 v , 20 V 20 v , 20 V