BF908WR,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET Preliminary specification 1995 Apr 25NXP Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING High forward transfer admittance PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b source admittance to input capacitance ratio 2 d drain Low noise gain controlled amplifier up to 1 GHz. 3g gate 2 2 4g gate 1 1 APPLICATIONS VHF and UHF applications with 12 V supply voltage, such as television tuners and professional d communications equipment. 34 g 2 DESCRIPTION g 1 Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by 21 integrated back-to-back diodes between gates and s,b source. Top view MAM198 CAUTION Marking code: MD. The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline (SOT343R) and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 12 V DS I drain current 40 mA D P total power dissipation 300 mW tot T operating junction temperature 150 C j y forward transfer admittance 36 43 50 mS fs C input capacitance at gate 1 2.4 3.1 4 pF ig1-s C reverse transfer capacitance f = 1 MHz 20 30 45 fF rs F noise figure f = 800 MHz 1.5 2.5 dB 1995 Apr 25 2