DocumentNumber:MMRF5015N FreescaleSemiconductor Rev. 0, 9/2015 Technical Data RFPowerGaNonSiCTransistor MMRF5015N Depletion Mode HEMT This 125 W CW RF powerGaN transistoris optimizedfor widebandoperation upto2700MHzandincludesinputmatchingforextendedbandwidth performance.Withits highgainandhighruggedness, this deviceis ideally 12700MHz,125WCW,50V suitedforCW,pulseandwidebandRFapplications. WIDEBAND This part is characterized and performance is guaranteed for applications RFPOWERGaNONSiC operatinginthe12700MHzband.Thereisnoguaranteeofperformancewhen TRANSISTOR this part is used in applications designed outside of these frequencies. TypicalNarrowbandPerformance: V =50Vdc,I =350 mA, T =25 C DD DQ A P Frequency G out ps D SignalType (W) (MHz) (dB) (%) (1) 2500 125 CW 16.0 64.2 CW (1) 2500 125 Peak 16.6 68.0 Pulse (100 sec, 20% Duty Cycle) OM--270--2 TypicalWidebandPerformance: V =50Vdc,I =300 mA, T =25 C DD DQ A PLASTIC Frequency P G out ps D SignalType (W) (MHz) (dB) (%) (2) 2002500 100 Peak 12.0 40.0 Pulse (100 sec, 50% Duty Cycle) LoadMismatch/Ruggedness Gate21 Drain Frequency P Test in SignalType VSWR (MHz) (W) Voltage Result (1) 2500 Pulse >20:1 at 8.0 Peak 50 No Device (100 sec, AllPhase (3 dB Degradation (Top View) 20% Duty Cycle) Angles Overdrive) Note: Exposed backside of the package is 1. Measured in 2500 MHz narrowband test circuit. the source terminalforthe transistor. 2. Measured in 2002500 MHz broadband reference circuit. Figure1.PinConnections Features Decade bandwidth performance Plastic package enables improved thermal resistance Advanced GaN on SiC, offering high power density Input matched for extended wideband performance High ruggedness: > 20:1 VSWR Applications Ideal for military end--use applications, Also suitable for commercial applications, including the following: including the following: Narrowband and multi--octave Public mobile radios, including wideband amplifiers emergency service radios Radar Industrial, scientific and medical Jammers Wideband laboratory amplifiers EMCtesting Wireless cellular infrastructure Freescale Semiconductor, Inc., 2015. All rights reserved. MMRF5015N RF DeviceData Freescale Semiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 125 Vdc DSS Gate--Source Voltage V 8, 0 Vdc GS Operating Voltage V 0to+50 Vdc DD Storage Temperature Range T 65to+150 C stg Case Operating Temperature Range T 55 to +150 C C (1) Operating Junction Temperature Range T 55 to +225 C J TotalDevice Dissipation T =25 C P 303 W C D Derate above 25 C 1.52 W/ C Table2.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.66 C/W JC CW: Case Temperature 80 C, 125 W CW, 50 Vdc, I =350 mA, 2500 MHz DQ ThermalImpedance, Junction to Case Z 0.16 C/W JC Pulse: Case Temperature 56C, 125 W Peak, 100 sec Pulse Width, 20%Duty Cycle, 50 Vdc, I =350 mA, 2500 MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 1B, passes 500 V Machine Model(perEIA/JESD22--A115) A, passes 100 V Charge Device Model(perJESD22--C101) IV, passes 2000 V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDEC J--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Drain Leakage Current I 5 mAdc DSS (V =8Vdc,V =10Vdc) GS DS Drain--Source Breakdown Voltage V 150 Vdc (BR)DSS (V =8Vdc,I =25mAdc) GS D OnCharacteristics Gate Threshold Voltage V 3.8 2.9 2.3 Vdc GS(th) (V =10Vdc,I =25mAdc) DS D Gate Quiescent Voltage V 3.3 2.7 2.3 Vdc GS(Q) (V =50Vdc,I =350 mAdc, Measured in FunctionalTest) DS D DynamicCharacteristics Reverse TransferCapacitance C 1.0 pF rss (V =50Vdc 30 mV(rms)ac 1 MHz, V =4Vdc) DS GS Output Capacitance C 8.7 pF oss (V =50Vdc 30 mV(rms)ac 1 MHz, V =4Vdc) DS GS (3) Input Capacitance C 52.0 pF iss (V =50Vdc,V =4Vdc 30 mV(rms)ac 1 MHz) DS GS 1. Continuous use at maximum temperature willaffect MTTF. 2. RefertoAN1955,ThermalMeasurementMethodologyofRFPowerAmplifiers.Goto