BLF7G15LS-200,112 NXP

BLF7G15LS-200 Power LDMOS transistor Rev. 4 1 September 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at T = 25 C in a common source class-AB production test circuit. case Mode of operation f I V P G ACPR Dq DS L(AV) p D (MHz) (mA) (V) (W) (dB) (%) (dBc) 1 2-carrier W-CDMA 1476 to 1511 1600 28 50 19.5 29 35 1 Test signal: 3GPP test model 1 64 DPCH PAR = 7.5 dB at 0.01 % probability on CCDF per carrier. Carrier spacing 5 MHz. 1.2 Features and benefits Excellent ruggedness High efficiency Low R providing excellent thermal stability th Designed for broadband operation (1450 MHz to 1550 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1450 MHz to 1550 MHz frequency rangeBLF7G15LS-200 Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1drain 1 1 2gate 3 1 3source 2 2 3 sym112 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF7G15LS-200 - earless flanged LDMOST ceramic package 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS I drain current - 56 A D T storage temperature 65 +150 C stg T junction temperature - 200 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to case T =80 C P =50W 0.30 K/W th(j-c) case L V =28V I = 1600 mA DS Dq 6. Characteristics Table 6. Characteristics T = 25 C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit V drain-source breakdown voltage V =0V I =2.7 mA 65 67 - V (BR)DSS GS D V gate-source threshold voltage V =10 V I = 270 mA 1.5 1.9 2.3 V GS(th) DS D I drain leakage current V =0V V =28V - - 4.2 A DSS GS DS BLF7G15LS-200 4 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 1 September 2015 2 of 11