BLF7G22LS-200,112 NXP

BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 5 1 September 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at T = 25 C in a common source class-AB production test circuit. case Mode of operation f I V P G ACPR Dq DS L(AV) p D (MHz) (mA) (V) (W) (dB) (%) (dBc) [1] 2-carrier W-CDMA 2110 to 2170 1620 28 55 18.5 31 31 [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. 1.2 Features and benefits Excellent ruggedness High efficiency Low R providing excellent thermal stability th Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2110 MHz to 2170 MHz frequency rangeBLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G22L-200 (SOT502A) 1drain 1 1 2gate 3 [1] 3source 2 2 3 sym112 BLF7G22LS-200 (SOT502B) 1drain 1 1 2gate 3 [1] 3source 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF7G22L-200 - flanged LDMOST ceramic package; 2 mounting holes; SOT502A 2 leads BLF7G22LS-200 - earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS T storage temperature 65 +150 C stg T junction temperature - 200 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to case T =80 C; P = 80 W (CW); 0.26 K/W th(j-c) case L V = 28 V; I = 1620 mA DS Dq BLF7G22L-200_7G22LS-200#5 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 5 1 September 2015 2 of 13