X-On Electronics has gained recognition as a prominent supplier of BLF878,112 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BLF878,112 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BLF878,112 NXP

BLF878,112 electronic component of NXP
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See Product Specifications
Part No.BLF878,112
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors LDMOS TNS
Datasheet: BLF878,112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 269.8338 ea
Line Total: USD 269.83

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ : 1
Multiples : 1
1 : USD 269.8338
5 : USD 254.4041

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
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We are delighted to provide the BLF878,112 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF878,112 and other electronic components in the RF MOSFET Transistors category and beyond.

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BLF878 UHF power LDMOS transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at V = 42 V in a common-source 860 MHz narrowband test circuit. DS Mode of operation f P P P G IMD3 L L(PEP) L(AV) p D (MHz) (W) (W) (W) (dB) (%) (dBc) CW, class AB 860 300 - - 21 60 - 2-Tone, class AB f = 860 f = 860.1 - 300 - 21 46 35 1 2 1 PAL BG 860 (ch69) 300 (peak sync.) - - 21 45 - 2 DVB-T (8k OFDM) 858 - - 75 21 32 32 1 Black video signal, sync expansion: input sync = 33 % output sync 27 %. 2 Measured dBc with delta marker at 4.3 MHz from center frequency. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features 2-Tone performance at 860 MHz, a drain-source voltage V of 42 V and a quiescent DS drain current I = 1.4 A: Dq Peak envelope power load power = 300 W Power gain = 21 dB Drain efficiency = 46 % Third order intermodulation distortion = 35 dBc DVB performance at 858 MHz, a drain-source voltage V of 42 V and a quiescent DS drain current I = 1.4 A: Dq Average output power = 75 W Power gain = 21 dB Drain efficiency = 32 % Third order intermodulation distortion = 32 dBc (4.3 MHz from center frequency)BLF878 UHF power LDMOS transistor Integrated ESD protection Advanced flange material for optimum thermal behavior and reliability Excellent ruggedness High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Excellent reliability Internal input and output matching for high gain and optimum broadband operation Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Communication transmitter applications in the UHF band Industrial applications in the UHF band 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 drain1 1 2 1 2 drain2 5 3 gate1 3 4 gate2 5 3 4 4 1 5 source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF878 - flanged LDMOST ceramic package 2 mounting holes 4 leads SOT979A BLF878 3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 19

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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