BLF884P,112 NXP

BLF884P BLF884PS UHF power LDMOS transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at V = 50 V unless otherwise specified. DS Mode of operation f P P G IMD3 IMD PAR L(AV) L(M) p D shldr (MHz) (W) (W) (dB) (%) (dBc) (dBc) (dB) RF performance in a common source 860 MHz narrowband test circuit 2-tone, class-AB f = 860 f = 860.1 150 - 21 46 32 - - 1 2 1 2 DVB-T (8k OFDM) 858 70 - 21 33 - 31 8.2 RF performance in a common source 470 MHz to 860 MHz broadband test circuit 1 2 DVB-T (8k OFDM) 858 70 - 20 32 - 32 8.0 1 Measured dBc with delta marker at 4.3 MHz from center frequency. 2 PAR (of output signal) at 0.01 % probability on CCDF PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits Excellent ruggedness Optimum thermal behavior and reliability, R = 0.22 K/W th(j-c) High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Internal input matching for high gain and optimum broadband operation Excellent reliability Easy power control Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3 Applications Communication transmitter applications in the UHF band Industrial applications in the UHF bandBLF884P BLF884PS UHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF884P (SOT1121A) 1drain1 1 2 1 2drain2 3gate1 3 4gate2 5 5 4 1 5source 3 4 2 sym117 BLF884PS (SOT1121B) 1drain1 1 2drain2 3gate1 3 4gate2 5 4 1 5source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF884P - flanged LDMOST ceramic package SOT1121A 2 mounting holes 4 leads BLF884PS - earless flanged LDMOST ceramic package SOT1121B 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 104 V DS V gate-source voltage 0.5 +11 V GS T storage temperature 65 +150 C stg T junction temperature - 200 C j BLF884P BLF884PS 3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 15