X-On Electronics has gained recognition as a prominent supplier of BLF888A,112 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BLF888A,112 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BLF888A,112 NXP

BLF888A,112 electronic component of NXP
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See Product Specifications
Part No.BLF888A,112
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors UHF POWER LDMOS TRANSISTOR
Datasheet: BLF888A,112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 254.9353 ea
Line Total: USD 254.94

Availability - 0
MOQ: 1  Multiples: 60
Pack Size: 60
Availability Price Quantity
0
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ : 1
Multiples : 60
1 : USD 254.9353
5 : USD 240.3687

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Transistor Type
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the BLF888A,112 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF888A,112 and other electronic components in the RF MOSFET Transistors category and beyond.

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BLF888A BLF888AS UHF power LDMOS transistor Rev. 6 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at V = 50 V unless otherwise specified. DS Mode of operation f P P G IMD3 IMD PAR L(AV) L(M) p D shldr (MHz) (W) (W) (dB) (%) (dBc) (dBc) (dB) RF performance in a common source narrowband test circuit CW 650 - 600 20 67 - - - CW (42 V) 650 - 500 20 69 - - - 2-tone, class-AB f = 860 f = 860.1 250 - 21 46 32 - - 1 2 1 pulsed, class-AB 860 - 600 20 58 - - - 2 3 DVB-T (8k OFDM) 858 110 - 21 31 - 32 8.2 2 3 858 125 - 21 32.5 - 30 8.0 RF performance in a common source 470 MHz to 860 MHz broadband test circuit 2 3 DVB-T (8k OFDM) 858 110 - 20 30 - 32 8.0 2 3 858 120 - 20 31 - 31 7.8 1 Measured at = 10 % t = 100 s. p 2 Measured dBc with delta marker at 4.3 MHz from center frequency. 3 PAR (of output signal) at 0.01 % probability on CCDF PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits Excellent ruggedness (VSWR 40 : 1 through all phases) Optimum thermal behavior and reliability, R = 0.15 K/W th(j-c) Suitable for CW UHF and ISM applications High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Internal input matching for high gain and optimum broadband operation Excellent reliability Easy power control Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/ECBLF888A BLF888AS UHF power LDMOS transistor 1.3 Applications Communication transmitter applications in the UHF band Industrial applications in the UHF band 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF888A (SOT539A) 1drain1 12 1 2drain2 5 3gate1 3 4gate2 3 4 5 4 1 5source 2 sym117 BLF888AS (SOT539B) 1drain1 12 1 2drain2 5 3gate1 3 3 4 4gate2 5 4 1 5source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF888A - flanged balanced ceramic package SOT539A 2 mounting holes 4 leads BLF888AS - earless flanged balanced ceramic package SOT539B 4 leads BLF888A BLF888AS 6 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 6 1 September 2015 2 of 17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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