BLF888DU NXP

BLF888D BLF888DS UHF power LDMOS transistor Rev. 4 18 February 2016 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at V = 50 V in an ultra wide Doherty application. DS Test signal f P G IMD PAR L(AV) p D shldr (MHz) (W) (dB) (%) (dBc) (dB) 1 1 2 3 DVB-T (8k OFDM) 470 to 860 115 to 134 17 40 to 48 38 to 44 8 1 Depending on selected channel. 2 Depending on exciter used. 3 PAR (of output signal) at 0.01 % probability on CCDF PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits High efficiency High power gain Excellent ruggedness (VSWR 40 : 1 through all phases) Excellent thermal stability Integrated ESD protection One Doherty design covers the full bandwidth from 470 MHz to 860 MHz Internal input matching for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Broadcast transmitter applications in the UHF band Digital broadcastingBLF888D BLF888DS UHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF888D (SOT539A) 1 drain1 (peak) 12 1 2 drain2 (main) 5 3 gate1 (peak) 3 4 gate2 (main) 3 4 5 4 1 5source 2 sym117 BLF888DS (SOT539B) 1 drain1 (peak) 12 1 2 drain2 (main) 5 3 gate1 (peak) 3 3 4 4 gate2 (main) 5 4 1 5source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF888D - flanged balanced ceramic package 2 mounting holes 4 leads SOT539A BLF888DS - earless flanged balanced ceramic package 4 leads SOT539B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 104 V DS V gate-source voltage 0.5 +11 V GS T storage temperature 65 +150 C stg 1 T junction temperature -225 C j 1 Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculator. BLF888D BLF888DS All information provided in this document is subject to legal disclaimers. Ampleon Netherlands B.V. 2016. All rights reserved. Product data sheet Rev. 4 18 February 2016 2 of 12