X-On Electronics has gained recognition as a prominent supplier of BLF871,112 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BLF871,112 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

BLF871,112 NXP

BLF871,112 electronic component of NXP
BLF871,112 NXP
BLF871,112 RF MOSFET Transistors
BLF871,112  Semiconductors

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See Product Specifications
Part No. BLF871,112
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors Trans MOSFET N-CH 89V 3-Pin
Datasheet: BLF871,112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 140.6895 ea
Line Total: USD 140.69 
Availability - 0
MOQ: 1  Multiples: 60
Pack Size: 60
Availability Price Quantity
0
Ship by Wed. 30 Apr to Tue. 06 May
MOQ : 1
Multiples : 60
1 : USD 140.6895
5 : USD 132.6395

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BLF871,112 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF871,112 and other electronic components in the RF MOSFET Transistors category and beyond.

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BLF871 BLF871S UHF power LDMOS transistor Rev. 5 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at V = 40 V in a common-source 860 MHz test circuit. DS Mode of operation f P P P G IMD3 PAR L L(PEP) L(AV) p D (MHz) (W) (W) (W) (dB) (%) (dBc) (dB) CW, class AB 860 100 - - 21 60 - - 2-tone, class AB f = 860 f = 860.1 - 100 - 21 47 35 - 1 2 1 2 DVB-T (8k OFDM) 858 - - 24 22 33 34 8.3 1 Measured dBc with delta marker at 4.3 MHz from center frequency. 2 PAR (of output signal) at 0.01 % probability on CCDF PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features 2-tone performance at 860 MHz, a drain-source voltage V of 40 V and a quiescent DS drain current I = 0.5 A: Dq Peak envelope power load power = 100 W Power gain = 21 dB Drain efficiency = 47 % Third order intermodulation distortion = 35 dBc DVB performance at 858 MHz, a drain-source voltage V of 40 V and a quiescent DS drain current I = 0.5 A: Dq Average output power = 24 W Power gain = 22 dB Drain efficiency = 33 % Third order intermodulation distortion = 34 dBc (4.3 MHz from center frequency)BLF871 BLF871S UHF power LDMOS transistor Integrated ESD protection Excellent ruggedness High power gain High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Communication transmitter applications in the UHF band Industrial applications in the UHF band 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF871 (SOT467C) 1 drain 1 1 2 gate 1 3 source 3 2 3 2 sym112 BLF871S (SOT467B) 1 drain 1 2 gate 1 1 3 source 2 3 3 sym112 2 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF871 - flanged LDMOST ceramic package 2 mounting holes 2 leads SOT467C BLF871S - earless LDMOST ceramic package 2 leads SOT467B BLF871 BLF871S 5 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 5 1 September 2015 2 of 20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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