Document Number: MMZ27333B NXPSemiconductors Rev. 1, 02/2017 Technical Data 2WHighGainPowerAmplifierfor CellularInfrastructure MMZ27333BT1 InGaP GaAs HBT TheMMZ27333Bisaversatile3--stagepoweramplifiertargetedatdriverand pre--driver applications for macro and micro base stations and final--stage applications for small cells. Its versatile design allows operation in any 15002700MHz,35dB,33dBm frequencybandfrom1500to2700MHzprovidinggainofmorethan35dB.The InGaPHBTLINEARAMPLIFIER device operates off a 5 V supply, and its bias currents and portions of the matching networks are adjustable for optimum performance in any specific application. It is housed in a QFN 4 4 surface mount package. Typical PA Driver Performance: V =V =V =V =5Vdc, CC1 CC2 CC3 BIAS I = 430 mA. CQ P G ACPR I out ps CC Frequency (dBm) (dB) (dBc) Total TestSignal 2140 MHz 22.3 35.8 48.0 499 W--CDMA QFN4 4 2600 MHz 21.3 36.1 48.0 498 LTE 20 MHz Features P1dB:upto33dBm Gain: More than 35 dB 5 V Supply Excellent Linearity High Efficiency Single--ended Power Detector Band Tunable Cost--effective 24--pin, 4 mm QFN surface mount plastic package V / CC1 RF RF V P in2 out1 CC2 DET V /RF CC3 out3 RF in1 V /RF CC3 out3 V /RF CC3 out3 BIAS CIRCUIT V V VV BA1 BA2 BIBIASAS Figure1.FunctionalBlockDiagram 20162017 NXP B.V. MMZ27333BT1 RF Device Data NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Supply Voltage V 6 V CC Supply Current I I 68 mA CC1 CC I 240 CC2 I 960 CC3 RF Input Power P 10 dBm in Storage Temperature Range T 65 to +150 C stg Junction Temperature T 175 C J Table2.ThermalCharacteristics (1) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R C/W JC Case Temperature 95C, V =V =V =V = 5 Vdc Stage 1 75 CC1 CC2 CC3 BIAS Stage 2 79 Stage 3 21 Table3.ElectricalCharacteristics (V =V =V =V = 5 Vdc, 2600 MHz, T =25 C, 50 ohm system, in NXP PA Driver CC1 CC2 CC3 BIAS A Application Circuit tuned for LTE application) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) G 34.8 35.8 dB p Input Return Loss (S11) IRL 17 dB Output Return Loss (S22) ORL 13.3 dB Power Output 1dB Compression P1dB 32.2 dBm Total Supply Current (I +I +I +I ) I 420 430 445 mA CC1 CC2 CC3 BIAS CQ Supply Voltage V 5 V CC Table4.ESDProtectionCharacteristics TestMethodology Class Human Body Model (per JESD22--A114) 1C Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table5.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 1 260 C Table6.OrderingInformation Device TapeandReelInformation Package MMZ27333BT1 T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel QFN 4 4 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to