X-On Electronics has gained recognition as a prominent supplier of MMZ27333BT1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. MMZ27333BT1 RF Amplifier are a product manufactured by NXP. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

MMZ27333BT1 NXP

MMZ27333BT1 electronic component of NXP
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Part No.MMZ27333BT1
Manufacturer: NXP
Category: RF Amplifier
Description: RF Amplifier InGaP HBT Linear Amplifier, 1500-2700 MHz, 35 dB, 33 dBm
Datasheet: MMZ27333BT1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.976 ea
Line Total: USD 8.98 
Availability - 4524
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4524
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 8.976
10 : USD 8.25
25 : USD 7.865
100 : USD 7.018
250 : USD 6.71
500 : USD 6.182
1000 : USD 5.401
2000 : USD 5.28
5000 : USD 5.269

   
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We are delighted to provide the MMZ27333BT1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMZ27333BT1 and other electronic components in the RF Amplifier category and beyond.

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Document Number: MMZ27333B NXPSemiconductors Rev. 1, 02/2017 Technical Data 2WHighGainPowerAmplifierfor CellularInfrastructure MMZ27333BT1 InGaP GaAs HBT TheMMZ27333Bisaversatile3--stagepoweramplifiertargetedatdriverand pre--driver applications for macro and micro base stations and final--stage applications for small cells. Its versatile design allows operation in any 15002700MHz,35dB,33dBm frequencybandfrom1500to2700MHzprovidinggainofmorethan35dB.The InGaPHBTLINEARAMPLIFIER device operates off a 5 V supply, and its bias currents and portions of the matching networks are adjustable for optimum performance in any specific application. It is housed in a QFN 4 4 surface mount package. Typical PA Driver Performance: V =V =V =V =5Vdc, CC1 CC2 CC3 BIAS I = 430 mA. CQ P G ACPR I out ps CC Frequency (dBm) (dB) (dBc) Total TestSignal 2140 MHz 22.3 35.8 48.0 499 W--CDMA QFN4 4 2600 MHz 21.3 36.1 48.0 498 LTE 20 MHz Features P1dB:upto33dBm Gain: More than 35 dB 5 V Supply Excellent Linearity High Efficiency Single--ended Power Detector Band Tunable Cost--effective 24--pin, 4 mm QFN surface mount plastic package V / CC1 RF RF V P in2 out1 CC2 DET V /RF CC3 out3 RF in1 V /RF CC3 out3 V /RF CC3 out3 BIAS CIRCUIT V V VV BA1 BA2 BIBIASAS Figure1.FunctionalBlockDiagram 20162017 NXP B.V. MMZ27333BT1 RF Device Data NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Supply Voltage V 6 V CC Supply Current I I 68 mA CC1 CC I 240 CC2 I 960 CC3 RF Input Power P 10 dBm in Storage Temperature Range T 65 to +150 C stg Junction Temperature T 175 C J Table2.ThermalCharacteristics (1) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R C/W JC Case Temperature 95C, V =V =V =V = 5 Vdc Stage 1 75 CC1 CC2 CC3 BIAS Stage 2 79 Stage 3 21 Table3.ElectricalCharacteristics (V =V =V =V = 5 Vdc, 2600 MHz, T =25 C, 50 ohm system, in NXP PA Driver CC1 CC2 CC3 BIAS A Application Circuit tuned for LTE application) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) G 34.8 35.8 dB p Input Return Loss (S11) IRL 17 dB Output Return Loss (S22) ORL 13.3 dB Power Output 1dB Compression P1dB 32.2 dBm Total Supply Current (I +I +I +I ) I 420 430 445 mA CC1 CC2 CC3 BIAS CQ Supply Voltage V 5 V CC Table4.ESDProtectionCharacteristics TestMethodology Class Human Body Model (per JESD22--A114) 1C Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table5.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 1 260 C Table6.OrderingInformation Device TapeandReelInformation Package MMZ27333BT1 T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel QFN 4 4 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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