DocumentNumber:MMZ09332B Freescale Semiconductor Rev. 0, 8/2015 Technical Data HeterojunctionBipolarTransistor Technology(InGaPHBT) MMZ09332BT1 High Efficiency/Linearity Amplifier TheMMZ09332Bisa2--stage,highlinearityInGaPHBTbroadbandamplifier designed for femtocell, picocell, smart grid, W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and 1301000MHz,30dB,33dBm W--CDMA air interfaces with an ACPR of 50 dBc at an output power of up to InGaPHBTLINEARAMPLIFIER 23 dBm,coveringfrequenciesfrom130to1000MHz.Itoperatesfromasupply voltage of 3 to 5 volts. The amplifier requires minimal external matching and offers state--of--the--art reliability, ruggedness, temperature stability and ESD performance. Typical PA Performance: V =V =V =5Vdc,I = 140 mA CC1 CC2 BIAS CQ P G ACPR I out ps CC Frequency (dBm) (dB) (dBc) (mA) TestSignal 748 MHz 23 30.9 49.6 315 W--CDMA QFN3 3 942 MHz 22 27.1 50.4 240 W--CDMA Typical PA Performance: V =V =V =5Vdc,I =110mA CC1 CC2 BIAS CQ P G PAE out ps Frequency (dBm) (dB) (%) TestSignal 450 MHz 32.3 37.2 45.5 5V CW 30.3 3.6 V 26.3 3.6 V 53.7 3.6 V 760 MHz 32.2 30.8 40.0 5V CW Features Frequency: 1301000 MHz P1dB: 33 dBm, 450 to 1000 MHz OIP3: up to 48 dBm 900 MHz Excellent Linearity Active Bias Control (adjustable externally) Single 3 to 5 V Supply Single--ended Power Detector Cost--effective 12--pin 3 mm QFN Surface Mount Plastic Package Power V V V V Down BA1 BA2 BIAS CC1 ACTIVEBIASWITH POWERDOWN INTERSTAGE V / INPUT OUTPUT CC2 RF in MATCH RF PREMATCH PREMATCH out OUTPUT POWER DETECTOR P DET Figure1.FunctionalBlockDiagram Freescale Semiconductor, Inc., 2015. All rights reserved. MMZ09332BT1 RF Device Data Freescale Semiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Supply Voltage V 6 V CC Total Supply Current I 1200 mA CC RF Input Power P 29 dBm in Storage Temperature Range T 65 to +150 C stg Junction Temperature T 175 C J Table2.ThermalCharacteristics (1) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC Case Temperature 93C, V =V =V =5 Vdc Stage 1 51 CC1 CC2 BIAS Stage 2 26 Table3.ElectricalCharacteristics (V =V =V =5 Vdc, 760 MHz, T =25 C, 50 ohm system, in Freescale PA Driver CC1 CC2 BIAS A Application Circuit) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) G 28.7 30.5 dB p Input Return Loss (S11) IRL 12 dB Output Return Loss (S22) ORL 12 dB Power Output 1dB Compression P1dB 32.8 dBm Intercept Point, Two--Tone CW OIP3 43 dBm Power Down Voltage Bias On 0 1.0 V Bias Off 1.4 2.0 Power Down Current Bias On 0 0 mA Bias Off 0.018 1.38 Supply Current I 88 108 128 mA CQ Supply Voltage V 5 V CC Table4.ESDProtectionCharacteristics TestMethodology Class Human Body Model(per JESD22--A114) 1C Machine Model(per EIA/JESD22--A115) A Charge Device Model(per JESD22--C101) IV Table5.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 1 260 C Table6.OrderingInformation Device TapeandReelInformation Package MMZ09332BT1 T1 Suffix =1,000 Units, 12 mm Tape Width, 7--inch Reel QFN 3 3 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to