AMMC-5620-W50 Broadcom

AMMC-5620 6 - 20 GHz High Gain Amplifier Data Sheet Chip Size: 1410 x 1010 m (55.5 x 39.7 mils) Chip Size Tolerance: 10 m ( 0.4 mils) Chip Thickness: 100 10 m (4 0.4 mils) Pad Dimensions: 80 x 80 m (3.1 x 3.1 mils or larger) Description Features Avago Technologies AMMC-5620 MMIC is a GaAs wide- Frequency Range: 6 - 20 GHz band amplifier designed for medium output power and High Gain: 19 dB Typical high gain over the 6 - 20 GHz frequency range. The 3 Output Power: 15dBm Typical cascaded stages provide high gain while the single bias supply offers ease of use. It is fabricated using a PHEMT Input and Output Return Loss: < -10 dB integrated circuit process. The RF input and output ports Positive Gain Slope: + 0.21dB/GHz Typical have matching circuitry for use in 50- environments. Single Supply Bias: 5 V 95 mA Typical The backside of the chip is both RF and DC ground. This helps simplify the assembly process and reduces assembly Applications related performance variations and costs. For improved reliability and moisture protection, the die is passivated General purpose, wide-band amplifier in communica - at the active areas. The MMIC is a cost effective alternative tion systems or microwave instrumentation to hybrid (discrete FET) amplifiers that require complex High gain amplifier tuning and assembly processes. 1 AMMC-5620 Absolute Maximum Ratings Symbol Parameters/Conditions Units Min. Max. V Drain Supply Voltage V 7.5 DD I Total Drain Current mA 135 DD P DC Power Dissipation W 1.0 DC P RF CW Input Power dBm 20 in T Channel Temp. C +150 ch T Operating Backside Temp. C - 55 b T Storage Temp. C - 65 +165 stg T Maximum Assembly Temp. (60 sec max) C +300 max Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure that an ESD approved carrier is used when dice are transported from one destination to another. Personal grounding is to be worn at all times when handling these devices 1 AMMC-5620 DC Specifications/Physical Properties Symbol Parameters and Test Conditions Units Min. Typical Max. V Recommended Drain Supply Current V 5 DD I Total Drain Supply Current ( V = 5V) mA 70 95 130 DD DD I Total Drain Supply Current ( V = 7V) mA 105 DD DD 3 q Thermal Resistance C/W 33 ch-b (Backside temperature (T ) = 25 C b Notes: 1. Backside temperature Tb = 25C unless otherwise noted 2. Channel-to-backside Thermal Resistance (qch-b) = 47C/W at Tchannel (Tc) = 150C as measured using infrared microscopy. Thermal Resis- tance at backside temperature (Tb) = 25C calculated from measured data. 3 AMMC-5620 RF Specifications Tb = 25C, V =5V, I 95 mA, Z =50 DD DD= o Symbol Parameters and Test Conditions Units Min. Typical Max. 2 S21 Small-signal Gain dB 16 19 22 Positive Small-signal Gain Slope dB/GHz +0.21 Gain Slope RL Input Return Loss dB 10 13 in RL Output Return Loss dB 10 14 out 2 S12 Reverse Isolation dB - 55 P Output Power at 1 dB Gain Compression 20 GHz dBm 12.5 15 -1dB P Saturated Output Power (3dB Gain Compression) 20 GHz dBm 14.5 17 sat OIP3 Output 3rd Order Intercept Point 20 GHz dBm 23.5 NF Noise Figure 20 GHz dB 4.2 5.0 Notes: 3. 100% on-wafer RF test is done at frequency = 6, 13 and 20 GHz, except as noted. 2