DocumentNumber:MMZ25332B4 NXPSemiconductors Rev. 1, 12/2017 Technical Data 2WHighGainPowerAmplifierfor MMZ25332B4T1 CellularInfrastructure InGaP GaAs HBT The MMZ25332B4 is a versatile 2--stage power amplifier targeted at driver and pre--driver applications for macro and micro base stations and final stage 15002700MHz,26.5dB,33dBm applications for small cells. Its versatile design allows operation in any InGaPHBTLINEARAMPLIFIER frequency band from 1500 to 2700 MHz providing gain of more than 26.5 dB. The device operates off a 5 V supply, and its bias currents and portions of the matching networks are adjustable for optimum performance in any specific application.ItishousedinaQFN4x4surfacemountpackagewhichallowsfor maximum via hole pattern. The MMZ25332B4 offers exceptional reliability, ruggedness and ESD performance. Typical Performance: V =V =V =5Vdc,I = 400 mA CC1 CC2 BIAS CQ P G ACPR I out ps CC QFN4 4--24L Frequency (dBm) (dB) (dBc) (mA) TestSignal 2140 MHz 21.7 26.5 48 441 W--CDMA 2350 MHz 21.5 26.6 48 446 LTE 2600 MHz 22.5 26.7 48 453 LTE Features Frequency: 15002700 MHz P1dB: 33 dBm 2500 MHz Power gain: 26.5 dB 2500 MHz OIP3: 48 dBm 2500 MHz EVM 3% 23.5 dBm P , WLAN (802.11g) out Active bias control (adjustable externally) Power down control via V BIAS Single 3 to 5 volt supply Single--ended power detector Cost--effective 24--pin, 4 mm QFN surface mount plastic package V P CC1 DET V /RF CC2 out V /RF RF in CC2 out V /RF CC2 out BIAS CIRCUIT V V VV BA1 BA2 BIBIASAS Figure1.FunctionalBlockDiagram 2015, 2017 NXP B.V. MMZ25332B4T1 RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Supply Voltage V 6 V CC Supply Current I 1200 mA CC RF Input Power P 30 dBm in Storage Temperature Range T 65 to +150 C stg Junction Temperature T 175 C J Table2.ThermalCharacteristics (1) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC Case Temperature 95C, V =V =V =5 Vdc Stage 1 70 CC1 CC2 BIAS Stage 2 22 Table3.ElectricalCharacteristics (V =V =V =5 Vdc, 2600 MHz, T =25 C, 50 ohm system, in NXP CW CC1 CC2 BIAS A Application Circuit) Characteristic Symbol Min Typ Max Unit Small--SignalGain (S21) G 23.5 26 dB p Input Return Loss (S11) IRL 13 dB Output Return Loss (S22) ORL 18 dB Power Output 1dB Compression P1dB 33 dBm Intercept Point, Two--Tone CW OIP3 48 dBm Supply Current I 368 392 415 mA CQ Supply Voltage V 5 V CC Table4.ESDProtectionCharacteristics TestMethodology Class Human Body Model(per JESD22--A114) 2 Machine Model(per EIA/JESD22--A115) B Charge Device Model(per JESD22--C101) IV Table5.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 1 260 C Table6.OrderingInformation Device TapeandReelInformation Package MMZ25332B4T1 T1 Suffix =1,000 Units, 12 mm Tape Width, 13--inch Reel QFN 4 4--24L 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to