DocumentNumber:MML09211H FreescaleSemiconductor Rev. 1, 9/2014 Technical Data EnhancementModepHEMT Technology(E--pHEMT) MML09211HT1 Low Noise Amplifier TheMML09211His asingle--stagelownoiseamplifier(LNA)withactive biasandhighisolationforuseincellularinfrastructureapplications.Itis designed for a range of low noise, high linearity applications such as pico cell, 400--1400MHz,21.3dB femto cell, tower mounted amplifiers (TMA) and receiver front end circuits. It 22dBm operatesfromasinglevoltagesupply andissuitableforapplicationswith E--pHEMTLNA frequencies from400to1400MHz suchas ISM, GSM, W--CDMAandLTE. Features Ultra Low Noise Figure: 0.52 dB 900 MHz Frequency: 400--1400 MHz Unconditionally Stable over Temperature High Reverse Isolation: --35 dB 900 MHz DFN2 2 P1dB: 22 dBm 900 MHz Small--Signal Gain: 21.3 dB 900 MHz (adjustable externally) Third Order Output Intercept Point: 32.6 dBm 900 MHz Single 5 V Supply Supply Current: 60 mA 50 Ohm Operation (some external matching required) Cost--effective 8--pin, 2 mm DFN Surface Mount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. (1) Table1.TypicalPerformance Table2.MaximumRatings 400 900 1400 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz Unit Supply Voltage V 6 V DD (2) Noise Figure NF 0.54 0.52 0.66 dB Supply Current I 150 mA DD Input Return Loss IRL --19 --23 --17 dB RF Input Power P 20 dBm in (S11) Storage Temperature Range T --65to+150 C stg Output Return Loss ORL --16 --16 --20 dB (S22) Junction Temperature T 175 C J Small--SignalGain G 26.1 21.3 18.8 dB p (S21) PowerOutput P1dB 22 22 20 dBm 1dB Compression Third Order Input IIP3 11 11.3 13.5 dBm Intercept Point Third Order Output OIP3 31.5 32.6 32.3 dBm Intercept Point 1. V =5Vdc,T =25 C, 50 ohm system, application circuit DD A tuned forspecified frequency. 2. Noisefigurevaluecalculatedwithconnectorlossesremoved. Table3.ThermalCharacteristics (3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 37.5 C/W JC Case Temperature 86C, 5 Vdc, 60 mA, no RF applied 3. Referto AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table4.ElectricalCharacteristics (V =5 Vdc, 900 MHz, T =25 C, 50 ohm system, in Freescale Application Circuit) DD A Characteristic Symbol Min Typ Max Unit Small--SignalGain (S21) G 19 21.3 dB p Input Return Loss (S11) IRL --23 dB Output Return Loss (S22) ORL --16 dB PowerOutput 1dB Compression P1dB 22 dBm Third Order Input Intercept Point IIP3 11.3 dBm Third Order Output Intercept Point OIP3 32.6 dBm Reverse Isolation (S12) S12 --35 dB (1) Noise Figure NF 0.52 dB (2) Supply Current I 45 60 90 mA DD Supply Voltage V 5 V DD 1. Noise figure value calculated with connectorlosses removed. 2. DC current measured with no RF signalapplied. Table5.FunctionalPinDescription Pin Number PinFunction 1 RF RF18 N.C. in in 2 RF in RF27 RF in out GND 3 RF Input Matching Termination RF36 RF MATCH out 4 Bias Voltage DC Supply V 4 5 FB BIAS 5 RF Feedback (TopView) 6 RF /DC Supply out 7 RF /DC Supply out Figure1.PinConnections 8 No Connection Table6.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD 22--A114) 0 Machine Model(perEIA/JESD 22--A115) A Charge Device Model(perJESD 22--C101) IV Table7.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDEC J--STD--020 1 260 C MML09211HT1 RF DeviceData Freescale Semiconductor, Inc. 2