X-On Electronics has gained recognition as a prominent supplier of MMZ09312BT1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. MMZ09312BT1 RF Amplifier are a product manufactured by NXP. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

MMZ09312BT1 NXP

MMZ09312BT1 electronic component of NXP
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Part No.MMZ09312BT1
Manufacturer: NXP
Category: RF Amplifier
Description: RF Amplifier IC CDMA, GSM 400MHz ~ 1GHz 12-QFN (3x3)
Datasheet: MMZ09312BT1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.291 ea
Line Total: USD 5.29 
Availability - 1096
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1096
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 5.291
10 : USD 4.301
100 : USD 3.993
250 : USD 3.641
500 : USD 3.311
1000 : USD 2.849
2000 : USD 2.849

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Maximum Operating Temperature
Operating Supply Current
Packaging
Series
Test Frequency
Brand
Factory Pack Quantity :
Supply Voltage - Max
Supply Voltage - Min
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We are delighted to provide the MMZ09312BT1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMZ09312BT1 and other electronic components in the RF Amplifier category and beyond.

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Document Number: MMZ09312B FreescaleSemiconductor Rev. 2, 12/2014 Technical Data HeterojunctionBipolarTransistor Technology(InGaPHBT) MMZ09312BT1 High Efficiency/Linearity Amplifier TheMMZ09312Bisa2--stagehighefficiency,ClassABInGaPHBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It 400--1000MHz,31.7dB is suitablefor applications with frequencies from 400to 1000MHz suchas 29.6dBm R CDMA, GSM, LTE and ZigBee at operating voltages from 3 to 5 Volts. InGaPHBTLINEARAMPLIFIER Typical Performance: V =V =V =5Vdc,I =74mA CC1 CC2 BIAS CQ P G ACPR PAE out ps Frequency (dBm) (dB) (dBc) (%) TestSignal 900 MHz 24 31.5 --50.0 26.0 IS--95 CDMA 900 MHz 18.0 31.5 --50.0 10.8 1C W--CDMA TM1 900 MHz 17.0 31.5 --50.0 9.0 10 MHz LTE TM1.1 QFN3 3 750 MHz 17.5 32.0 --50.0 15.3 LTE 10/20 MHz 450 MHz 29 33.0 --40.0 57.0 ZigBee Features Frequency: 400--1000 MHz P1dB: 29.6 dBm 900 MHz Power Gain: 31.7 dB 900 MHz OIP3: 42 dBm 900 MHz Active Bias Control (adjustable externally) Single 3 to 5 V Supply Performs Well with Digital Predistortion Systems Single--ended Power Detector Cost--effective 12--pin, 3 mm QFN Surface Mount Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. (1) Table1.TypicalPerformance Table2.MaximumRatings 450 900 Rating Symbol Value Unit Characteristic Symbol MHz MHz Unit Supply Voltage V 6 V CC Small--Signal Gain (S21) G 33.8 31.7 dB p Supply Current I 550 mA CC Input Return Loss (S11) IRL --22 --15 dB RF Input Power P 14 dBm in Output Return Loss (S22) ORL --25 --18 dB Storage Temperature Range T --65 to +150 C stg Power Output 1dB P1dB 28.8 29.6 dBm Junction Temperature T 175 C J Compression 1. V =V =V =5Vdc,T =25 C, 50 ohm system, CW CC1 CC2 BIAS A Application Circuit Table3.ThermalCharacteristics (2) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 56 C/W JC Case Temperature 84C, V =V =V =5Vdc CC1 CC2 BIAS 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table4.ElectricalCharacteristics (V =V =V =5 Vdc, 900 MHz, T =25 C, 50 ohm system, in Freescale CW CC1 CC2 BIAS A Application Circuit) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) G 29 31.7 dB p Input Return Loss (S11) IRL --15 dB Output Return Loss (S22) ORL --18 dB Power Output 1dB Compression P1dB 29.6 dBm Third Order Output Intercept Point, Two--Tone CW OIP3 42 dBm Noise Figure NF 4 dB Supply Current I 69 74 83 mA CQ Supply Voltage V 5 V CC Table5.ESDProtectionCharacteristics TestMethodology Class Human Body Model (per JESD22--A114) Meets 2000 V for all pins except: Pin 11 meets 400 V Pin 8 meets 200 V Class 0 Rating Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table6.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 1 260 C V V GND BA2 CC1 V V GND BA2 CC1 V V CC2 12 11 10 BA1 BIASBIAS CIRCUITCIRCUIT V19 V BA1 CC2 V RF RF 28 out BIAS out V BIAS RF RF 37 out in 45 6 RF RF in out GND GND P DET GND GND P DET Figure1.FunctionalBlockDiagram Figure2.PinConnections MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 2

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI
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