Document Number: MMZ09312B FreescaleSemiconductor Rev. 2, 12/2014 Technical Data HeterojunctionBipolarTransistor Technology(InGaPHBT) MMZ09312BT1 High Efficiency/Linearity Amplifier TheMMZ09312Bisa2--stagehighefficiency,ClassABInGaPHBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It 400--1000MHz,31.7dB is suitablefor applications with frequencies from 400to 1000MHz suchas 29.6dBm R CDMA, GSM, LTE and ZigBee at operating voltages from 3 to 5 Volts. InGaPHBTLINEARAMPLIFIER Typical Performance: V =V =V =5Vdc,I =74mA CC1 CC2 BIAS CQ P G ACPR PAE out ps Frequency (dBm) (dB) (dBc) (%) TestSignal 900 MHz 24 31.5 --50.0 26.0 IS--95 CDMA 900 MHz 18.0 31.5 --50.0 10.8 1C W--CDMA TM1 900 MHz 17.0 31.5 --50.0 9.0 10 MHz LTE TM1.1 QFN3 3 750 MHz 17.5 32.0 --50.0 15.3 LTE 10/20 MHz 450 MHz 29 33.0 --40.0 57.0 ZigBee Features Frequency: 400--1000 MHz P1dB: 29.6 dBm 900 MHz Power Gain: 31.7 dB 900 MHz OIP3: 42 dBm 900 MHz Active Bias Control (adjustable externally) Single 3 to 5 V Supply Performs Well with Digital Predistortion Systems Single--ended Power Detector Cost--effective 12--pin, 3 mm QFN Surface Mount Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. (1) Table1.TypicalPerformance Table2.MaximumRatings 450 900 Rating Symbol Value Unit Characteristic Symbol MHz MHz Unit Supply Voltage V 6 V CC Small--Signal Gain (S21) G 33.8 31.7 dB p Supply Current I 550 mA CC Input Return Loss (S11) IRL --22 --15 dB RF Input Power P 14 dBm in Output Return Loss (S22) ORL --25 --18 dB Storage Temperature Range T --65 to +150 C stg Power Output 1dB P1dB 28.8 29.6 dBm Junction Temperature T 175 C J Compression 1. V =V =V =5Vdc,T =25 C, 50 ohm system, CW CC1 CC2 BIAS A Application Circuit Table3.ThermalCharacteristics (2) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 56 C/W JC Case Temperature 84C, V =V =V =5Vdc CC1 CC2 BIAS 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table4.ElectricalCharacteristics (V =V =V =5 Vdc, 900 MHz, T =25 C, 50 ohm system, in Freescale CW CC1 CC2 BIAS A Application Circuit) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) G 29 31.7 dB p Input Return Loss (S11) IRL --15 dB Output Return Loss (S22) ORL --18 dB Power Output 1dB Compression P1dB 29.6 dBm Third Order Output Intercept Point, Two--Tone CW OIP3 42 dBm Noise Figure NF 4 dB Supply Current I 69 74 83 mA CQ Supply Voltage V 5 V CC Table5.ESDProtectionCharacteristics TestMethodology Class Human Body Model (per JESD22--A114) Meets 2000 V for all pins except: Pin 11 meets 400 V Pin 8 meets 200 V Class 0 Rating Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table6.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 1 260 C V V GND BA2 CC1 V V GND BA2 CC1 V V CC2 12 11 10 BA1 BIASBIAS CIRCUITCIRCUIT V19 V BA1 CC2 V RF RF 28 out BIAS out V BIAS RF RF 37 out in 45 6 RF RF in out GND GND P DET GND GND P DET Figure1.FunctionalBlockDiagram Figure2.PinConnections MMZ09312BT1 RF Device Data Freescale Semiconductor, Inc. 2