Product Information

BLF642,112

BLF642,112 electronic component of NXP

Datasheet
NXP Semiconductors RF MOSFET Transistors LDMOS TRANSISTOR
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 63.2346 ea
Line Total: USD 63.23

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 20
1 : USD 70.8279
10 : USD 66.7248

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 63.2346
2 : USD 61.9905
5 : USD 61.3184
10 : USD 59.488
25 : USD 59.488
50 : USD 59.488
100 : USD 59.488
250 : USD 58.916
500 : USD 54.912

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

More Products By Manufacturer "NXP"

Image Description
BLF6G10-45,112 electronic component of NXP BLF6G10-45,112

NXP Semiconductors RF MOSFET Transistors LDMOS TNS
Stock : 0

BLF6G13LS-250P,112 electronic component of NXP BLF6G13LS-250P,112

Trans RF MOSFET N-CH 100V 42A 5-Pin CDFM Bulk
Stock : 0

BLF6G15L-40RN,112 electronic component of NXP BLF6G15L-40RN,112

RF MOSFET Transistors Pwr LDMOS transistor transistor
Stock : 0

BLF645,112 electronic component of NXP BLF645,112

RF MOSFET Transistors TRANSISTOR PWR LDMOS
Stock : 0

BLF647P,112 electronic component of NXP BLF647P,112

RF MOSFET Transistors BLF647PACC-4LTUBE-BULK
Stock : 0

BLF6G10L-260PRN,112 electronic component of NXP BLF6G10L-260PRN,112

BLF6G10L-260PRN,112
Stock : 0

BLF6G20LS-110,112 electronic component of NXP BLF6G20LS-110,112

Transistors RF MOSFET LDMOS TNS
Stock : 0

BLF647,112 electronic component of NXP BLF647,112

BLF647,112
Stock : 0

BLF6G10LS-260PRN:112 electronic component of NXP BLF6G10LS-260PRN:112

BLF6G10LS-260PRN:112
Stock : 0

BLF6G13L-250P,112 electronic component of NXP BLF6G13L-250P,112

Trans RF MOSFET N-CH 100V 42A 5-Pin CDFM Bulk
Stock : 0

More Products By Category "RF MOSFET Transistors"

Image Description
BLF6G10-45,112 electronic component of NXP BLF6G10-45,112

NXP Semiconductors RF MOSFET Transistors LDMOS TNS
Stock : 0

BLF6G13LS-250P,112 electronic component of NXP BLF6G13LS-250P,112

Trans RF MOSFET N-CH 100V 42A 5-Pin CDFM Bulk
Stock : 0

BLF6G15L-40RN,112 electronic component of NXP BLF6G15L-40RN,112

RF MOSFET Transistors Pwr LDMOS transistor transistor
Stock : 0

BLF7G15LS-200,112 electronic component of NXP BLF7G15LS-200,112

RF MOSFET Transistors Single 65V 56A 0.048Ohms
Stock : 0

BLF861A electronic component of Advanced Semiconductor BLF861A

Transistors RF MOSFET RF Transistor
Stock : 0

BLF871,112 electronic component of NXP BLF871,112

RF MOSFET Transistors Trans MOSFET N-CH 89V 3-Pin
Stock : 0

BLF884P,112 electronic component of NXP BLF884P,112

RF MOSFET Transistors 50V 240mOhms
Stock : 0

BLF888,112 electronic component of NXP BLF888,112

RF MOSFET Transistors TRANSISTOR RF PWR LDMOS
Stock : 0

BLF8G09LS-270GW,118 electronic component of NXP BLF8G09LS-270GW,118

Power LDMOS transistor
Stock : 0

BLF8G22LS-270GV electronic component of NXP BLF8G22LS-270GV

Trans RF MOSFET N-CH 65V 7-Pin CDFM
Stock : 0

Additional Infomation About Product

BLF642 Broadband power LDMOS transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF performance at T = 25 C in a common source test circuit. h Mode of operation f V P G IMD DS L p D (MHz) (V) (W) (dB) (%) (dBc) CW, class-AB 1300 32 35 19 63 - 2-tone, class-AB 1300 32 17.5 19 48 28 1.2 Features and benefits CW performance at 1300 MHz, a drain-source voltage V of 32 V and a quiescent DS drain current I =0.2 A : Dq Average output power = 35 W Power gain = 19 dB Drain efficiency = 63 % 2-tone performance at 1300 MHz, a drain-source voltage V of 32 V and a quiescent DS drain current I =0.2 A : Dq Average output power = 17.5 W Power gain = 19 dB Drain efficiency = 48 % Intermodulation distortion = 28 dBc Integrated ESD protection Excellent ruggedness High power gain High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)BLF642 Broadband power LDMOS transistor 1.3 Applications Communication transmitter applications in the HF to 1400 MHz frequency range Industrial applications in the HF to 1400 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain 1 1 2gate 1 3source 3 2 3 2 sym112 1 Connected to flange 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF642 - flanged LDMOST ceramic package 2 mounting holes 2 leads SOT467C 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +11 V GS T storage temperature 65 +150 C stg T junction temperature - 200 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit 1 R thermal resistance from junction to case T = 80 C P = 35 W 1.6 K/W th(j-c) case L 1 R is measured under RF conditions. th(j-c) BLF642 3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

Looking for help? Visit our FAQ's Section to answer to all your questions

Resources

Company

Support

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
  +61 8 9358 9358 |   sales@x-on.com.au |   Chat
 
Policies | Terms and Conditions | Sitemap

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted