BLF6G15L-40RN,112 NXP

BLF6G15L-40RN BLF6G15LS-40RN Power LDMOS transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at T = 25 C in a class-AB production test circuit. case Test signal f V P G ACPR DS L(AV) p D (MHz) (V) (W) (dB) (%) (dBc) 1 2-carrier W-CDMA 1476 to 1511 28 2.5 22.5 13.5 45 1 Test signal: 3GPP test model 1 64 DPCH PAR = 8.4 dB at probability of 0.01 % on CCDF carrier carrier spacing 5 MHz. 1.2 Features and benefits Typical 2-carrier W-CDMA performance at frequencies of 1476 MHz and 1511 MHz, a supply voltage of 28 V and an I of 375 mA: Dq Average output power = 2.5 W Power gain = 22.5 dB Efficiency = 13.5 % ACPR = 45 dBc Easy power control Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1450 MHz to 1550 MHz) Internally matched for ease of use Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC. 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1450 MHz to 1550 MHz frequency rangeBLF6G15L(S)-40RN Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G15L-40RN (SOT1135A) 1drain 1 1 2gate 1 3source 2 3 3 sym112 2 BLF6G15LS-40RN (SOT1135B) 1drain 1 1 2gate 1 3source 2 3 3 sym112 2 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G15L-40RN - flanged ceramic package 2 mounting holes 2 leads SOT1135A BLF6G15LS-40RN - earless flanged ceramic package 2 leads SOT1135B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +11 V GS T storage temperature 65 +150 C stg T junction temperature - 200 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to case T =80 C P = 2.5 W (CW) 1.30 K/W th(j-case) case L BLF6G15L-40RN 6G15LS-40RN 3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 12