BLF6G21-10G,112 NXP

BLF6G21-10G Power LDMOS transistor Rev. 4 1 September 2015 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance I = 100 mA T =25 C in a common source class-AB production test circuit. Dq case Mode of operation f V P G ACPR DS L(AV) p D (MHz) (V) (W) (dB) (%) (dBc) 1 2-carrier W-CDMA 2110 to 2170 28 0.7 18.5 15 50 1 1-carrier W-CDMA 2110 to 2170 28 2 19.3 31 39 1 Test signal: 3GPP test model 1 64 DPCH PAR = 7.5 dB at 0.01 % probability on CCDF per carrier carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an I of 100 mA: Dq Average output power = 0.7 W Gain = 18.5 dB Efficiency = 15 % ACPR = 50 dBc Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an I of 100 mA: Dq Average output power = 2 W Gain = 19.3 dB Efficiency = 31 % ACPR = 39 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiencyBLF6G21-10G Power LDMOS transistor Excellent thermal stability No internal matching for broadband operation Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and multi carrier applications in the HF to 2200 MHz frequency range Broadcast drivers 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain 1 1 2gate 1 3source 2 3 3 sym112 2 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G21-10G - ceramic surface-mounted package 2 leads SOT538A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS T storage temperature 65 +150 C stg T junction temperature - 225 C j BLF6G21-10G 4 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 1 September 2015 2 of 12