DocumentNumber:MMRF5017HS NXPSemiconductors Rev. 0, 06/2018 Technical Data RFPowerGaNTransistor MMRF5017HS This 125WRFpowerGaN transistoris capableofbroadbandoperationfrom 30to2200MHzandincludesinputmatchingforextendedbandwidth performance.Withits highgainandhighruggedness, this deviceis ideally suitedforCW, pulseandbroadbandRF applications. This part is characterized and performance is guaranteed for applications 302200MHz,125WCW,50V operating in the 30 to 2200 MHz band. There is no guarantee of performance WIDEBAND when this part is used in applications designed outside of these frequencies. RFPOWERGaNTRANSISTOR TypicalPerformance: V =50Vdc,T =25 C DD A P Frequency out G ps D SignalType (W) (dB) (%) (MHz) (1,2) 30940 CW 90 16.0 45.0 (1) 520 CW 125 18.0 59.1 (1) 940 CW 80 18.4 44.0 2200 Pulse 200 17.0 57.0 NI--400S--2S (100 sec, 20% Duty Cycle) LoadMismatch/Ruggedness Frequency P Test in SignalType VSWR (MHz) (W) Voltage Result (1) 520 Pulse >10:1 at 3.4 50 No Device (100 sec, AllPhase (3 dB Degradation Gate21 Drain 20% Duty Cycle) Angles Overdrive) 1. Measured in 30940 MHz wideband reference circuit (page 4). 2. The values shown are the minimum measured efficiency performance numbers across the indicated frequency range. (Top View) Features Note: The backside of the package is the Advanced GaN on SiC, offering high power density source terminalfor the transistor. Decade bandwidth performance Figure1.PinConnections Input matched for extended wideband performance High ruggedness: > 10:1 VSWR TypicalApplications Ideal for military end--use applications, including the following: Narrowband and multi--octave wideband amplifiers Radar Jammers EMCtesting Also suitable for commercial applications, including the following: Public mobile radios, including emergency service radios Industrial, scientific and medical Wideband laboratory amplifiers Wireless cellular infrastructure This document contains information on a preproduction product. Specifications and information herein are subject to change without notice. 2018 NXP B.V. MMRF5017HS RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 125 Vdc DSS Gate--Source Voltage V 8, 0 Vdc GS Operating Voltage V 0to+55 Vdc DD Maximum Forward Gate Current T =25 C I 24 mA C GMAX Storage Temperature Range T 65to+150 C stg Case Operating Temperature Range T 55to+150 C C Operating Junction Temperature Range T 55to+225 C J (1) Absolute Maximum ChannelTemperature T 350 C MAX TotalDevice Dissipation T =25 C P 154 W C D Derate above 25 C 0.77 W/ C Table2.ThermalCharacteristics (2) Characteristic Symbol Value Unit (3) ThermalResistance by Infrared Measurement, Active Die Surface--to--Case R (IR) 1.3 C/W JC CW: Case Temperature 81 C, 80 W CW, 50 Vdc, I =200 mA, 940 MHz DQ (4) ThermalResistance by Finite Element Analysis, Channel--to--Case R 1.77 C/W CHC Case Temperature 90C, P =96W (FEA) D Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(per JS--001--2017) 2, passes 2500 V Charge Device Model(per JS--002--2014) II, passes 200 V Table4.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Drain--Source Breakdown Voltage V 150 Vdc (BR)DSS (V =8Vdc,I =20mAdc) GS D OnCharacteristics Gate Threshold Voltage V 3.8 3.0 2.3 Vdc GS(th) (V =10Vdc,I =20mAdc) DS D Gate Quiescent Voltage V 3.6 3.1 2.3 Vdc GS(Q) (V =48Vdc,I =200 mAdc, Measured in FunctionalTest) DD D Gate--Source Leakage Current I 7.5 mAdc GSS (V =0Vdc,V =5Vdc) DS GS Table5.OrderingInformation Device TapeandReelInformation Package MMRF5017HSR5 R5 Suffix =50 Units, 32 mm Tape Width, 13--inch Reel NI--400S--2S 1. Reliability tests were conducted at 225 C. Operation with T at 350 C willreduce median time to failure. MAX 2. Characterized in 30940 MHz reference circuit at 940 MHz and 80 W CW output power. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to