DocumentNumber:MRF1K50N NXPSemiconductors Rev. 0, 11/2016 Technical Data RFPowerLDMOSTransistors MRF1K50N High Ruggedness N--Channel MRF1K50GN Enhancement--Mode Lateral MOSFETs ThesehighruggednessdevicesaredesignedforuseinhighVSWRindustrial, scientific and medical applications, as well as radio and VHF TV broadcast, 1.8500MHz,1500WCW,50V sub--GHzaerospaceandmobileradioapplications.Theirunmatchedinputand WIDEBAND output design allows for wide frequency range use from 1.8 to 500 MHz. RFPOWERLDMOSTRANSISTORS TypicalPerformance: V =50Vdc DD Frequency P G out ps D (MHz) SignalType (W) (dB) (%) (1,2) 87.5--108 CW 1421 CW 23.1 83.2 OM--1230--4L (3,4) PLASTIC 230 Pulse 1500 Peak 23.4 75.1 MRF1K50N (100 sec, 20%Duty Cycle) LoadMismatch/Ruggedness Frequency P Test in SignalType VSWR (MHz) (W) Voltage Result (3) 230 Pulse >65:1 at all 15 Peak 50 No Device OM--1230G--4L (100 sec, 20% Phase Angles (3 dB Degradation PLASTIC MRF1K50GN Duty Cycle) Overdrive) 1. Data from 87.5108 MHz broadband reference circuit (page 5). 2. The values shown are the centerband performance numbers across the indicated frequency range. 3. Data from 230 MHz narrowband production test fixture (page 11). 4. Alldata measured in fixture with device soldered to heatsink. 31 DrainA GateA Features High drain--source avalanche energy absorption capability Unmatched input and output allowing wide frequency range utilization Device can be used single--ended or in a push--pull configuration DrainB GateB42 Characterizedfrom30to50Vforeaseofuse Suitable for linear application Integrated ESD protection with greater negative gate--source voltage range (Top View) for improved Class C operation Recommended driver: MRFE6VS25N (25 W) Note: Exposed backside of the package is thesourceterminalforthetransistor. TypicalApplications Industrial, Scientific, Medical (ISM) Figure1.PinConnections Laser generation Plasma etching Particleaccelerators MRI and other medical applications Industrial heating, welding and dryingsystems Broadcast Radio broadcast VHF TV broadcast Aerospace VHF omnidirectional range (VOR) HF and VHF communications Weather radar Mobile Radio VHF and UHF base stations 2016NXPB.V. MRF1K50NMRF1K50GN RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +133 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Operating Voltage V 50 Vdc DD Storage Temperature Range T 65to+150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J TotalDevice Dissipation T =25 C P 2941 W C D Derate above 25 C 14.71 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.068 C/W JC CW: Case Temperature 80 C, 1500 W CW, 50 Vdc, I =200 mA, 98 MHz DQ(A+B) ThermalImpedance, Junction to Case Z 0.015 C/W JC Pulse: Case Temperature 75C, 1500 W Peak, 100 sec Pulse Width, 20%Duty Cycle, 50 Vdc, I =100 mA, 230 MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2500 V Charge Device Model(perJESD22--C101) C3, passes 2000 V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDEC J--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 133 Vdc (BR)DSS (V =0Vdc,I =100 mAdc) GS D Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 100 mAdc DSS (V =133 Vdc, V =0Vdc) DS GS OnCharacteristics (4) Gate Threshold Voltage V 1.7 2.2 2.7 Vdc GS(th) (V =10Vdc,I =2130 Adc) DS D Gate Quiescent Voltage V 1.9 2.4 2.9 Vdc GS(Q) (V =50Vdc,I =100 mAdc, Measured in FunctionalTest) DD D(A+B) (4) Drain--Source On--Voltage V 0.15 Vdc DS(on) (V =10Vdc,I =2.4Adc) GS D (4) Forward Transconductance g 33.5 S fs (V =10Vdc,I =36Adc) DS D 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at