DocumentNumber:MRF6V2150N FreescaleSemiconductor Rev. 4, 4/2010 TechnicalData RFPowerField--EffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF6V2150NR1 Designed primarily for CW large--signal output and driver applications with MRF6V2150NBR1 frequenciesupto450MHz.Devicesareunmatchedandaresuitableforusein industrial, medical andscientific applications. Typical CW Performanceat 220MHz: V =50Volts,I = 450mA, DD DQ 10--450MHz,150W,50V P = 150Watts out LATERALN--CHANNEL Power Gain 25dB SINGLE--ENDED DrainEfficiency 68.3% BROADBAND Capableof Handling10:1VSWR, 50Vdc, 220MHz, 150Watts CW RFPOWERMOSFETs Output Power Features CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters CASE1486--03,STYLE1 TO--270 WB--4 QualifiedUptoaMaximum of 50V Operation DD PLASTIC IntegratedESD Protection MRF6V2150NR1 225C CapablePlastic Package RoHSCompliant InTapeandReel. R1Suffix = 500Units per 44mm, 13inchReel. CASE1484--04,STYLE1 TO--272 WB--4 PLASTIC MRF6V2150NBR1 PARTSARESINGLE--ENDED Table1.MaximumRatings Rating Symbol Value Unit RF /V RF /V Drain--Source Voltage V --0.5,+110 Vdc in GS out DS DSS Gate--SourceVoltage V --0.5,+12 Vdc GS StorageTemperatureRange T --65to+150 C stg RF /V RF /V in GS out DS CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J (Top View) Table2.ThermalCharacteristics (2,3) Note: Exposedbacksideofthepackageis Characteristic Symbol Value Unit thesourceterminalforthetransistor. ThermalResistance,JunctiontoCase Figure1.PinConnections CaseTemperature80C, 150W CW R 0.24 C/W JC Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 2.5 mA DSS (V =100Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 50 Adc DSS (V =50Vdc,V =0Vdc) DS GS Drain--SourceBreakdownVoltage V 110 Vdc (BR)DSS (I =75mA,V =0Vdc) D GS Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1 1.62 3 Vdc GS(th) (V =10Vdc,I =400Adc) DS D GateQuiescentVoltage V 1.5 2.6 3.5 Vdc GS(Q) (V =50Vdc,I =450mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.26 Vdc DS(on) (V =10Vdc,I =1Adc) GS D DynamicCharacteristics ReverseTransferCapacitance C 1.6 pF rss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 93 pF oss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 163 pF iss (V =50Vdc,V =0Vdc30mV(rms)ac 1MHz) DS GS FunctionalTests(InFreescaleTestFixture,50ohm system)V =50Vdc,I =450mA,P = 150W,f=220MHz,CW DD DQ out PowerGain G 23.5 25 26.5 dB ps Drain Efficiency 66 68.3 % D Input ReturnLoss IRL --17 --9 dB TypicalPerformances(InFreescale27MHz and450MHz TestFixtures,50ohm system)V =50Vdc,I =450mA,P =150W CW DD DQ out PowerGain f =27 MHz G 32.3 dB ps f=450MHz 22.9 Drain Efficiency f =27 MHz 78.7 % D f=450MHz 57.6 Input ReturnLoss f =27MHz IRL --10.6 dB f=450MHz --17.6 ATTENTION: TheMRF6V2150NandMRF6V2150NB arehighpowerdevices andspecialconsiderations must befollowedinboarddesignandmounting. Incorrect mountingcanleadtointernaltemperatures which exceedthemaximum allowableoperatingjunctiontemperature. RefertoFreescaleApplication NoteAN3263 (forbolt downmounting)orAN1907 (forsolderreflowmounting)PRIORTOSTARTINGSYSTEMDESIGNto ensurepropermountingofthesedevices. MRF6V2150NR1MRF6V2150NBR1 RF DeviceData FreescaleSemiconductor 2