DocumentNumber:MRF7S24250N NXPSemiconductors Rev. 1, 9/2016 Technical Data RFPowerLDMOSTransistor N--Channel Enhancement--Mode Lateral MOSFET MRF7S24250N The250WCWRFpowertransistorisdesignedforindustrial,scientific, medical (ISM) and industrial heating applications at 2450 MHz. This device is suitableforuseinCW,pulseandlinearapplications.This highgain,high efficiency rugged device is targeted to replace industrial magnetrons and will 2450MHz,250W,32V provide longer life and easier servicing. RFPOWERLDMOSTRANSISTOR TypicalPerformance: In 24002500 MHz reference circuit, V =32Vdc DD Frequency P G P in ps D out (MHz) SignalType (W) (dB) (%) (W) 2400 CW 9.0 14.5 55.5 255 2450 9.0 14.7 54.8 263 2500 9.0 14.3 55.5 242 OM--780--2L PLASTIC LoadMismatch/Ruggedness Frequency P Test in SignalType VSWR (MHz) (W) Voltage Result 2450 CW >10:1 14 32 No Device atallPhase (3 dB Degradation Gate 2 1 Drain Angles Overdrive) Features Characterized with series equivalent large--signal impedance parameters Internally matched for ease of use (Top View) Qualified up to a maximum of 32 V operation DD Note: Exposedbacksideofthepackageis Integrated high performance ESD protection thesourceterminalforthetransistor. TypicalApplications Figure1.PinConnections Industrial heating and drying Material welding Plasma lighting Scientific Medical: skin treatment, blood therapy, electrosurgery 2016NXPB.V. MRF7S24250N RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +65 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Storage Temperature Range T 65 to +150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J TotalDevice Dissipation T =25 C P 769 W C D Derate above 25 C 3.85 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.26 C/W JC CW: Case Temperature 98 C, 250 W CW, I =100 mA, 2450 MHz DQ ThermalImpedance, Junction to Case Z 0.024 C/W JC Pulse: Case Temperature 53C, 250 W Peak, 100 sec Pulse Width, 10%Duty Cycle, I =100 mA, 2450 MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2500 V Machine Model(perEIA/JESD22--A115) B, passes 250 V Charge Device Model(perJESD22--C101) IV, passes 2000 V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDEC J--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 2 Adc DSS (V =32Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics Gate Threshold Voltage V 1.2 Vdc GS(th) (V =10Vdc,I =303 Adc) DS D Gate Quiescent Voltage V 1.1 1.6 2.1 Vdc GS(Q) (V =30Vdc,I =100 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.2 Vdc DS(on) (V =10Vdc,I =3.7Adc) GS D (4) DynamicCharacteristics Reverse TransferCapacitance C 4.3 pF rss (V =32Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at