X-On Electronics has gained recognition as a prominent supplier of MRF8S9170NR3 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRF8S9170NR3 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRF8S9170NR3 NXP

MRF8S9170NR3 electronic component of NXP
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Part No.MRF8S9170NR3
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors HV8 900MHz 50W
Datasheet: MRF8S9170NR3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 183.5465 ea
Line Total: USD 550.64 
Availability - 0
MOQ: 3  Multiples: 3
Pack Size: 3
Availability Price Quantity
0
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 3
Multiples : 3
3 : USD 183.5465

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Brand
Factory Pack Quantity :
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the MRF8S9170NR3 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF8S9170NR3 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRF8S9170N FreescaleSemiconductor Rev. 1, 5/2010 Technical Data RFPowerFieldEffectTransistor N--Channel Enhancement--ModeLateral MOSFET MRF8S9170NR3 Designedfor CDMA basestationapplications withfrequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base stationmodulationformats. Typical Single--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 1000 mA, P = 50 Watts Avg., IQ Magnitude Clipping, Channel out Bandwidth= 3.84MHz, Input Signal PAR = 7.5dB 0.01% Probability 920--960MHz,50WAVG.,28V onCCDF. SINGLEW--CDMA LATERALN--CHANNEL G OutputPAR ACPR ps D RFPOWERMOSFET Frequency (dB) (%) (dB) (dBc) 920 MHz 19.3 36.5 6.0 --36.6 940 MHz 19.1 36.1 6.1 --36.7 960 MHz 18.9 36.0 6.0 --36.1 Capable of Handling10:1 VSWR, 32Vdc, 940 MHz, 250 Watts CW Output Power (3dB Input Overdrivefrom RatedP ), Designedfor out Enhanced Ruggedness Typical P 1dB CompressionPoint 177Watts CW out CASE 2021--03,STYLE1 Features OM--780--2 100% PAR Tested for Guaranteed Output Power Capability CharacterizedwithSeries Equivalent Large--Signal Impedance Parameters andCommonSourceS--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltage Range for Improved Class C Operation Designedfor Digital PredistortionError CorrectionSystems Optimizedfor Doherty Applications 225C Capable Plastic Package RoHSCompliant In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +70 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC Case Temperature 78C, 50W CW, 28Vdc, I =1000 mA 0.38 DQ Case Temperature 82C, 170W CW, 28Vdc, I =1000 mA 0.33 DQ 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2(Minimum) Machine Model(perEIA/JESD22--A115) A (Minimum) Charge Device Model(perJESD22--C101) IV (Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =70Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics Gate Threshold Voltage V 1.5 2.3 3 Vdc GS(th) (V =10Vdc,I =355 Adc) DS D Gate Quiescent Voltage V 2.3 3.1 3.8 Vdc GS(Q) (V =28Vdc,I =1000 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.1 0.19 0.3 Vdc DS(on) (V =10Vdc,I =2.9Adc) GS D (1) FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =1000 mA, P =50W Avg., f =920MHz, DD DQ out Single--CarrierW--CDMA, IQ MagnitudeClipping, Input SignalPAR =7.5 dB 0.01%Probability on CCDF. ACPR measured in 3.84 MHz ChannelBandwidth 5MHzOffset. PowerGain G 18.0 19.3 21.0 dB ps Drain Efficiency 34.0 36.5 % D Output Peak--to--Average Ratio 0.01%Probability on CCDF PAR 5.5 6.0 dB Adjacent ChannelPowerRatio ACPR --36.6 --34.5 dBc Input Return Loss IRL --10 --7 dB TypicalBroadbandPerformance(InFreescaleTestFixture,50ohm system)V =28Vdc,I =1000 mA, P =50WAvg., DD DQ out Single--CarrierW--CDMA, IQ MagnitudeClipping, Input SignalPAR =7.5 dB 0.01%Probability on CCDF. ACPR measured in 3.84 MHz ChannelBandwidth 5MHzOffset. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 920 MHz 19.3 36.5 6.0 --36.6 --10 940 MHz 19.1 36.1 6.1 --36.7 --12 960 MHz 18.9 36.0 6.0 --36.1 --16 1. Part internally matched both on input and output. (continued) MRF8S9170NR3 RF DeviceData Freescale Semiconductor 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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