Document Number: MRF8S9220H Freescale Semiconductor Rev. 0, 11/2009 Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9220HR3 Designed for CDMA base station applications with frequencies from 920 to MRF8S9220HSR3 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single-Carrier W-CDMA Performance: V = 28 Volts, I = DD DQ 920-960 MHz, 65 W AVG., 28 V 1600 mA, P = 65 Watts Avg., IQ Magnitude Clipping, Channel out SINGLE W-CDMA Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB 0.01% Probability on LATERAL N-CHANNEL CCDF. RF POWER MOSFETs G Output PAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 920 MHz 19.7 35.1 6.1 -37.4 940 MHz 19.8 35.3 6.2 -37.5 960 MHz 19.4 35.7 6.1 -37.4 Capable of Handling 10:1 VSWR, 32 Vdc, 940 MHz, 317 Watts CW CASE 465-06, STYLE 1 Output Power (3 dB Input Overdrive from Rated P ), Designed for out NI-780 Enhanced Ruggedness MRF8S9220HR3 Typical P 1 dB Compression Point 220 Watts CW out Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters Internally Matched for Ease of Use Integrated ESD Protection CASE 465A-06, STYLE 1 Greater Negative Gate-Source Voltage Range for Improved Class C NI-780S Operation MRF8S9220HSR3 Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V -0.5, +70 Vdc DSS Gate-Source Voltage V -6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T -65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J Table 2. Thermal Characteristics (2,3) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R C/W JC Case Temperature 81C, 65 W CW, 28 Vdc, I = 1600 mA 0.39 DQ Case Temperature 81C, 220 W CW, 28 Vdc, I = 1600 mA 0.32 DQ 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 1C (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Electrical Characteristics (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V = 70 Vdc, V = 0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V = 28 Vdc, V = 0 Vdc) DS GS Gate-Source Leakage Current I 1 Adc GSS (V = 5 Vdc, V = 0 Vdc) GS DS On Characteristics Gate Threshold Voltage V 1.5 2.2 3 Vdc GS(th) (V = 10 Vdc, I = 400 Adc) DS D Gate Quiescent Voltage V 2.3 3.1 3.8 Vdc GS(Q) (V = 28 Vdc, I = 1600 mAdc, Measured in Functional Test) DD D Drain-Source On-Voltage V 0.1 0.2 0.3 Vdc DS(on) (V = 10 Vdc, I = 4 Adc) GS D (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1600 mA, P = 65 W Avg., f = 960 MHz, DD DQ out Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth 5 MHz Offset. Power Gain G 18.0 19.4 21.0 dB ps Drain Efficiency 34.0 35.7 % D Output Peak-to-Average Ratio 0.01% Probability on CCDF PAR 5.7 6.1 dB Adjacent Channel Power Ratio ACPR -37.4 -35 dBc Input Return Loss IRL -13 -8 dB Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1600 mA, P = 65 W Avg., DD DQ out Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth 5 MHz Offset. G Output PAR ACPR IRL ps D Frequency (dB) (%) (dB) (dB) (dB) 920 MHz 19.7 35.1 6.1 -37.4 -13 940 MHz 19.8 35.3 6.2 -37.5 -24 960 MHz 19.4 35.7 6.1 -37.4 -13 1. Part internally matched both on input and output. (continued) MRF8S9220HR3 MRF8S9220HSR3 RF Device Data Freescale Semiconductor 2