X-On Electronics has gained recognition as a prominent supplier of MRF8S9220HSR3 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRF8S9220HSR3 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRF8S9220HSR3 NXP

MRF8S9220HSR3 electronic component of NXP
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Part No.MRF8S9220HSR3
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Trans RF MOSFET N-CH 70V 3-Pin NI-780S T/R
Datasheet: MRF8S9220HSR3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 176.7097 ea
Line Total: USD 176.71 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
   
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We are delighted to provide the MRF8S9220HSR3 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF8S9220HSR3 and other electronic components in the RF MOSFET Transistors category and beyond.

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Document Number: MRF8S9220H Freescale Semiconductor Rev. 0, 11/2009 Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9220HR3 Designed for CDMA base station applications with frequencies from 920 to MRF8S9220HSR3 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single-Carrier W-CDMA Performance: V = 28 Volts, I = DD DQ 920-960 MHz, 65 W AVG., 28 V 1600 mA, P = 65 Watts Avg., IQ Magnitude Clipping, Channel out SINGLE W-CDMA Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB 0.01% Probability on LATERAL N-CHANNEL CCDF. RF POWER MOSFETs G Output PAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 920 MHz 19.7 35.1 6.1 -37.4 940 MHz 19.8 35.3 6.2 -37.5 960 MHz 19.4 35.7 6.1 -37.4 Capable of Handling 10:1 VSWR, 32 Vdc, 940 MHz, 317 Watts CW CASE 465-06, STYLE 1 Output Power (3 dB Input Overdrive from Rated P ), Designed for out NI-780 Enhanced Ruggedness MRF8S9220HR3 Typical P 1 dB Compression Point 220 Watts CW out Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters Internally Matched for Ease of Use Integrated ESD Protection CASE 465A-06, STYLE 1 Greater Negative Gate-Source Voltage Range for Improved Class C NI-780S Operation MRF8S9220HSR3 Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V -0.5, +70 Vdc DSS Gate-Source Voltage V -6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T -65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J Table 2. Thermal Characteristics (2,3) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R C/W JC Case Temperature 81C, 65 W CW, 28 Vdc, I = 1600 mA 0.39 DQ Case Temperature 81C, 220 W CW, 28 Vdc, I = 1600 mA 0.32 DQ 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 1C (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Electrical Characteristics (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V = 70 Vdc, V = 0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V = 28 Vdc, V = 0 Vdc) DS GS Gate-Source Leakage Current I 1 Adc GSS (V = 5 Vdc, V = 0 Vdc) GS DS On Characteristics Gate Threshold Voltage V 1.5 2.2 3 Vdc GS(th) (V = 10 Vdc, I = 400 Adc) DS D Gate Quiescent Voltage V 2.3 3.1 3.8 Vdc GS(Q) (V = 28 Vdc, I = 1600 mAdc, Measured in Functional Test) DD D Drain-Source On-Voltage V 0.1 0.2 0.3 Vdc DS(on) (V = 10 Vdc, I = 4 Adc) GS D (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1600 mA, P = 65 W Avg., f = 960 MHz, DD DQ out Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth 5 MHz Offset. Power Gain G 18.0 19.4 21.0 dB ps Drain Efficiency 34.0 35.7 % D Output Peak-to-Average Ratio 0.01% Probability on CCDF PAR 5.7 6.1 dB Adjacent Channel Power Ratio ACPR -37.4 -35 dBc Input Return Loss IRL -13 -8 dB Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1600 mA, P = 65 W Avg., DD DQ out Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth 5 MHz Offset. G Output PAR ACPR IRL ps D Frequency (dB) (%) (dB) (dB) (dB) 920 MHz 19.7 35.1 6.1 -37.4 -13 940 MHz 19.8 35.3 6.2 -37.5 -24 960 MHz 19.4 35.7 6.1 -37.4 -13 1. Part internally matched both on input and output. (continued) MRF8S9220HR3 MRF8S9220HSR3 RF Device Data Freescale Semiconductor 2

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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