round button
Leave a message

X-On Electronics has gained recognition as a prominent supplier of MRFE6S9060NR1 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRFE6S9060NR1 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRFE6S9060NR1 NXP

MRFE6S9060NR1 electronic component of NXP
MRFE6S9060NR1 NXP
MRFE6S9060NR1 RF MOSFET Transistors
MRFE6S9060NR1  Semiconductors

Images are for reference only
See Product Specifications
Part No. MRFE6S9060NR1
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Freescale Semiconductor RF MOSFET Transistors HV6E 60W TO270-2N FET
Datasheet: MRFE6S9060NR1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 50.402 ea
Line Total: USD 50.4 
Availability - 819
Ship by Mon. 05 May to Wed. 07 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
819
Ship by Mon. 05 May to Wed. 07 May
MOQ : 1
Multiples : 1
1 : USD 50.402
10 : USD 43.571
100 : USD 42.471
250 : USD 39.116
500 : USD 38.665
1000 : USD 38.665
2500 : USD 37.983
5000 : USD 37.972

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Configuration
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Type
Brand
Ciss - Input Capacitance
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
Height
Length
Width
Channel Mode
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MRFE6S9060NR1 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRFE6S9060NR1 and other electronic components in the RF MOSFET Transistors category and beyond.

Image Part-Description
Stock Image MRFE6VP5600HR6
RF MOSFET Transistors VHV6 600W 50V NI1230H
Stock : 150
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image MRFE6VP5150NR1
RF MOSFET Transistors WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V
Stock : 268
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image MRFE6VP61K25HR5
RF MOSFET Transistors VHV6 1.25KW ISM NI1230H
Stock : 159
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image MRFE6VP100HR5
Freescale Semiconductor RF MOSFET Transistors VHV6 100W 50V ISM
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image MRFE6VP5150GNR1
Trans RF MOSFET N-CH 133V 5-Pin TO-270 W GULL T/R
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image MRFE6VP6300HR5
RF MOSFET Transistors VHV6 300W50VISM NI780H-4
Stock : 97
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image MRFE6VP61K25HSR5
Trans RF MOSFET N-CH 133V 4-Pin Case 375E-04 T/R
Stock : 50
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image MRFE6VP5600-434
Sub-GHz Development Tools MRFE6VP5600-434
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image MRFE6VP61K25NR6
RF MOSFET Transistors 1.8-600 MHz 1250 W CW 50 V
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image MRFE6VP5300NR1
RF MOSFET Transistors WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Image Part-Description
Stock Image MRFE6VP100HSR5
Transistors RF MOSFET VHV6 100W 50V ISM
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image MRFE6VP5150NR1
RF MOSFET Transistors WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V
Stock : 268
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image MRFE6VP61K25HR5
RF MOSFET Transistors VHV6 1.25KW ISM NI1230H
Stock : 159
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image MRFE6VP6300HR3
Freescale Semiconductor RF MOSFET Transistors VHV6 300W50VISM NI780H-4
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image MRFE6VS25GNR1
Transistors RF MOSFET VHV6E 25W50V TO270-2G
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Document Number: MRFE6S9060N Freescale Semiconductor Rev. 1, 10/2007 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. Typical Single-Carrier N-CDMA Performance 880 MHz, V = 28 Volts, DD 880 MHz, 14 W AVG., 28 V I = 450 mA, P = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, DQ out SINGLE N-CDMA Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB 0.01% Probability on CCDF. LATERAL N-CHANNEL Power Gain 21.1 dB BROADBAND Drain Efficiency 33% RF POWER MOSFET ACPR 750 kHz Offset -45.7 dBc in 30 kHz Channel Bandwidth Capable of Handling 10:1 VSWR, 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness GSM EDGE Application Typical GSM EDGE Performance: V = 28 Volts, I = 500 mA, DD DQ P = 21 Watts Avg., Full Frequency Band (920-960 MHz) out Power Gain 20 dB CASE 1265-09, STYLE 1 Drain Efficiency 46% TO-270-2 Spectral Regrowth 400 kHz Offset = -62 dBc PLASTIC Spectral Regrowth 600 kHz Offset = -78 dBc EVM 1.5% rms GSM Application Typical GSM Performance: V = 28 Volts, I = 500 mA, P = 60 Watts, DD DQ out Full Frequency Band (920-960 MHz) Power Gain 20 dB Drain Efficiency 63% Features Characterized with Series Equivalent Large-Signal Impedance Parameters Integrated ESD Protection 225C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V - 0.5, +66 Vdc DSS Gate-Source Voltage V - 0.5, +12 Vdc GS Maximum Operation Voltage V 32, +0 Vdc DD Storage Temperature Range T - 65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J Table 2. Thermal Characteristics (2,3) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R C/W JC Case Temperature 80C, 60 W CW 0.77 Case Temperature 78C, 14 W CW 0.88 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 2 (Minimum) Machine Model (per EIA/JESD22-A115) B (Minimum) Charge Device Model (per JESD22-C101) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD-020 3 260 C Table 5. Electrical Characteristics (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V = 66 Vdc, V = 0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V = 28 Vdc, V = 0 Vdc) DS GS Gate-Source Leakage Current I 10 Adc GSS (V = 5 Vdc, V = 0 Vdc) GS DS On Characteristics Gate Threshold Voltage V 1 2.2 3 Vdc GS(th) (V = 10 Vdc, I = 200 A) DS D Gate Quiescent Voltage V 2 3 4 Vdc GS(Q) (V = 28 Vdc, I = 450 mAdc, Measured in Functional Test) DD D Drain-Source On-Voltage V 0.05 0.27 0.4 Vdc DS(on) (V = 10 Vdc, I = 1.5 Adc) GS D Dynamic Characteristics Reverse Transfer Capacitance C 1.1 pF rss (V = 28 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Output Capacitance C 33 pF oss (V = 28 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Input Capacitance C 109 pF iss (V = 28 Vdc, V = 0 Vdc 30 mV(rms)ac 1 MHz) DS GS Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 450 mA, P = 14 W Avg., f = 880 MHz, Single-Carrier DD DQ out N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth 750 kHz Offset. PAR = 9.8 dB 0.01% Probability on CCDF Power Gain G 20 21.1 23 dB ps Drain Efficiency 30.5 33 % D Adjacent Channel Power Ratio ACPR -45.7 -44 dBc Input Return Loss IRL -18 -9 dB (continued) MRFE6S9060NR1 RF Device Data Freescale Semiconductor 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI
Supplier of the E-TDA7377 Audio Amplifier in USA, India, Australia image

Jul 8, 2024

Xon Electronics has distinguished itself as a premier supplier of the E-TDA7377, a highly sought-after audio amplifier IC manufactured by STMicroelectronics. With a strong presence in the USA, India,

G3783-IP67 Enclosures by Gainta: Rugged Protection for Electronics image

Apr 16, 2025
The G3783-IP67 Enclosure by Gainta is a durable, waterproof ABS plastic case designed for industrial and electronic applications. With IP67 protection, it ensures reliable housing for sensitive components in harsh environments.
1427DINCLIP Mounting Fixings by Hammond: Secure DIN Rail Mounting image

Apr 17, 2025
The 1427DINCLIP Mounting Fixings by Hammond are durable black nylon clips designed for secure enclosure mounting on 35mm DIN rails. Lightweight and robust, they ensure reliable performance in industrial setups.
TE Connectivity SIL09E472J:Resistor Networks & Arrays image

Apr 30, 2025
The SIL09E472J Resistor Networks & Arrays by TE Connectivity offer precise voltage division and impedance matching, ensuring stable circuit performance in industrial, automotive, and communication systems.

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON Electronics
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2025  X-ON Electronics Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing. All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted AS9120 Certified
Cookie Notice
Our website utilizes essential cookies to guarantee that it works properly, and optional analytics cookies to provide you with a better browsing experience. To learn more, read our Cookie Notice
a