Document Number: MRFE6S9060N Freescale Semiconductor Rev. 1, 10/2007 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. Typical Single-Carrier N-CDMA Performance 880 MHz, V = 28 Volts, DD 880 MHz, 14 W AVG., 28 V I = 450 mA, P = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, DQ out SINGLE N-CDMA Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB 0.01% Probability on CCDF. LATERAL N-CHANNEL Power Gain 21.1 dB BROADBAND Drain Efficiency 33% RF POWER MOSFET ACPR 750 kHz Offset -45.7 dBc in 30 kHz Channel Bandwidth Capable of Handling 10:1 VSWR, 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness GSM EDGE Application Typical GSM EDGE Performance: V = 28 Volts, I = 500 mA, DD DQ P = 21 Watts Avg., Full Frequency Band (920-960 MHz) out Power Gain 20 dB CASE 1265-09, STYLE 1 Drain Efficiency 46% TO-270-2 Spectral Regrowth 400 kHz Offset = -62 dBc PLASTIC Spectral Regrowth 600 kHz Offset = -78 dBc EVM 1.5% rms GSM Application Typical GSM Performance: V = 28 Volts, I = 500 mA, P = 60 Watts, DD DQ out Full Frequency Band (920-960 MHz) Power Gain 20 dB Drain Efficiency 63% Features Characterized with Series Equivalent Large-Signal Impedance Parameters Integrated ESD Protection 225C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V - 0.5, +66 Vdc DSS Gate-Source Voltage V - 0.5, +12 Vdc GS Maximum Operation Voltage V 32, +0 Vdc DD Storage Temperature Range T - 65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J Table 2. Thermal Characteristics (2,3) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R C/W JC Case Temperature 80C, 60 W CW 0.77 Case Temperature 78C, 14 W CW 0.88 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 2 (Minimum) Machine Model (per EIA/JESD22-A115) B (Minimum) Charge Device Model (per JESD22-C101) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD-020 3 260 C Table 5. Electrical Characteristics (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V = 66 Vdc, V = 0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V = 28 Vdc, V = 0 Vdc) DS GS Gate-Source Leakage Current I 10 Adc GSS (V = 5 Vdc, V = 0 Vdc) GS DS On Characteristics Gate Threshold Voltage V 1 2.2 3 Vdc GS(th) (V = 10 Vdc, I = 200 A) DS D Gate Quiescent Voltage V 2 3 4 Vdc GS(Q) (V = 28 Vdc, I = 450 mAdc, Measured in Functional Test) DD D Drain-Source On-Voltage V 0.05 0.27 0.4 Vdc DS(on) (V = 10 Vdc, I = 1.5 Adc) GS D Dynamic Characteristics Reverse Transfer Capacitance C 1.1 pF rss (V = 28 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Output Capacitance C 33 pF oss (V = 28 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Input Capacitance C 109 pF iss (V = 28 Vdc, V = 0 Vdc 30 mV(rms)ac 1 MHz) DS GS Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 450 mA, P = 14 W Avg., f = 880 MHz, Single-Carrier DD DQ out N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth 750 kHz Offset. PAR = 9.8 dB 0.01% Probability on CCDF Power Gain G 20 21.1 23 dB ps Drain Efficiency 30.5 33 % D Adjacent Channel Power Ratio ACPR -45.7 -44 dBc Input Return Loss IRL -18 -9 dB (continued) MRFE6S9060NR1 RF Device Data Freescale Semiconductor 2