DocumentNumber:MRFE6VP6300H FreescaleSemiconductor Rev. 1, 7/2011 TechnicalData RFPowerFieldEffectTransistors HighRuggedness N--Channel MRFE6VP6300HR3 Enhancement--ModeLateral MOSFETs MRFE6VP6300HSR3 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace andradio/landmobileapplications.Theyareunmatchedinputandoutput designs allowingwidefrequency rangeutilization,between1.8and600MHz. 1.8--600MHz,300W,50V Typical Performance: V =50Volts,I = 100mA DD DQ LATERALN--CHANNEL P f G IRL out ps D BROADBAND SignalType (W) (MHz) (dB) (%) (dB) RFPOWERMOSFETs Pulsed(100sec, 300Peak 230 26.5 74.0 --16 20%Duty Cycle) CW 300Avg. 130 25.0 80.0 --15 Capableof HandlingaLoadMismatchof 65:1VSWR, 50Vdc, 230MHz, at all Phase Angles 300Watts CW Output Power 300Watts PulsedPeak Power, 20%Duty Cycle, 100sec CASE465M--01,STYLE1 Capableof 300Watts CW Operation NI--780--4 MRFE6VP6300HR3 Features UnmatchedInput andOutput AllowingWideFrequency RangeUtilization DevicecanbeusedSingle--Endedor inaPush--Pull Configuration QualifiedUptoaMaximum of 50V Operation DD Characterizedfrom 30V to50V for ExtendedPower Range Suitablefor Linear ApplicationwithAppropriateBiasing CASE465H--02,STYLE1 IntegratedESD Protection NI--780S--4 MRFE6VP6300HSR3 Greater NegativeGate--SourceVoltage Rangefor ImprovedClass C Operation CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters RoHSCompliant NI--780--4inTapeandReel. R3Suffix = 250Units, 56mm TapeWidth, 13 inch Reel. For R5 Tape and Reel options, see p. 14. NI--780S--4inTapeandReel. R3Suffix = 250Units, 32mm TapeWidth, RF /V31 RF /V in GS out DS 13 inch Reel. For R5 Tape and Reel options, see p. 14. Table1.MaximumRatings Rating Symbol Value Unit 42 RF /V RF /V out DS in GS Drain--Source Voltage V --0.5,+130 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg (Top View) CaseOperatingTemperature T 150 C C Figure1.PinConnections TotalDeviceDissipation T =25C P 1050 W C D Derateabove25C 5.26 W/C (1,2) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit (4) ThermalResistance,JunctiontoCase C/W Pulsed:CaseTemperature75C, 300W Pulsed, 100sec PulseWidth,20%Duty Cycle, 50Vdc,I =100mA,230MHz Z 0.05 DQ JC CW: CaseTemperature87C,300W CW,50Vdc,I =1100mA,230MHz R 0.19 DQ JC 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) B (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (1) OffCharacteristics Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 130 Vdc (BR)DSS (V =0Vdc,I =50mA) GS D Zero Gate Voltage Drain Leakage Current I 5 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (1) GateThresholdVoltage V 1.7 2.2 2.7 Vdc GS(th) (V =10Vdc,I =480Adc) DS D GateQuiescentVoltage V 2.0 2.5 3.0 Vdc GS(Q) (V =50Vdc,I =100mAdc,MeasuredinFunctionalTest) DD D (1) Drain--SourceOn--Voltage V 0.25 Vdc DS(on) (V =10Vdc,I =1Adc) GS D (1) DynamicCharacteristics ReverseTransferCapacitance C 0.8 pF rss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 76 pF oss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 188 pF iss (V =50Vdc,V =0Vdc30mV(rms)ac 1MHz) DS GS FunctionalTests(InFreescaleTestFixture,50ohm system)V =50Vdc,I =100mA,P =300W Peak (60W Avg.),f=230MHz, DD DQ out Pulsed, 100sec PulseWidth,20%Duty Cycle PowerGain G 25.0 26.5 28.0 dB ps Drain Efficiency 72.0 74.0 % D Input ReturnLoss IRL --16 --9 dB LoadMismatch(InFreescaleApplicationTestFixture,50ohm system)V =50Vdc,I =100mA DD DQ VSWR65:1at allPhaseAngles NoDegradationinOutput Power Pulsed:P =300W Peak (60W Avg.),f=230MHz,Pulsed, out 100sec PulseWidth,20%Duty Cycle CW: P =300W Avg.,f=130MHz out 1. Eachsideofdevicemeasuredseparately. MRFE6VP6300HR3MRFE6VP6300HSR3 RF DeviceData FreescaleSemiconductor 2