X-On Electronics has gained recognition as a prominent supplier of MRFE6VP6300HR3 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRFE6VP6300HR3 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRFE6VP6300HR3 NXP

MRFE6VP6300HR3 electronic component of NXP
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Part No.MRFE6VP6300HR3
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Freescale Semiconductor RF MOSFET Transistors VHV6 300W50VISM NI780H-4
Datasheet: MRFE6VP6300HR3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 250
Multiples : 250
250 : USD 129.8031
N/A

Obsolete
   
Manufacturer
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RoHS - XON
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Transistor Polarity
Technology
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
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Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
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Vgs - Gate-Source Voltage
Series
Type
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Vgs Th - Gate-Source Threshold Voltage
Cnhts
Hts Code
Mxhts
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We are delighted to provide the MRFE6VP6300HR3 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRFE6VP6300HR3 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRFE6VP6300H FreescaleSemiconductor Rev. 1, 7/2011 TechnicalData RFPowerFieldEffectTransistors HighRuggedness N--Channel MRFE6VP6300HR3 Enhancement--ModeLateral MOSFETs MRFE6VP6300HSR3 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace andradio/landmobileapplications.Theyareunmatchedinputandoutput designs allowingwidefrequency rangeutilization,between1.8and600MHz. 1.8--600MHz,300W,50V Typical Performance: V =50Volts,I = 100mA DD DQ LATERALN--CHANNEL P f G IRL out ps D BROADBAND SignalType (W) (MHz) (dB) (%) (dB) RFPOWERMOSFETs Pulsed(100sec, 300Peak 230 26.5 74.0 --16 20%Duty Cycle) CW 300Avg. 130 25.0 80.0 --15 Capableof HandlingaLoadMismatchof 65:1VSWR, 50Vdc, 230MHz, at all Phase Angles 300Watts CW Output Power 300Watts PulsedPeak Power, 20%Duty Cycle, 100sec CASE465M--01,STYLE1 Capableof 300Watts CW Operation NI--780--4 MRFE6VP6300HR3 Features UnmatchedInput andOutput AllowingWideFrequency RangeUtilization DevicecanbeusedSingle--Endedor inaPush--Pull Configuration QualifiedUptoaMaximum of 50V Operation DD Characterizedfrom 30V to50V for ExtendedPower Range Suitablefor Linear ApplicationwithAppropriateBiasing CASE465H--02,STYLE1 IntegratedESD Protection NI--780S--4 MRFE6VP6300HSR3 Greater NegativeGate--SourceVoltage Rangefor ImprovedClass C Operation CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters RoHSCompliant NI--780--4inTapeandReel. R3Suffix = 250Units, 56mm TapeWidth, 13 inch Reel. For R5 Tape and Reel options, see p. 14. NI--780S--4inTapeandReel. R3Suffix = 250Units, 32mm TapeWidth, RF /V31 RF /V in GS out DS 13 inch Reel. For R5 Tape and Reel options, see p. 14. Table1.MaximumRatings Rating Symbol Value Unit 42 RF /V RF /V out DS in GS Drain--Source Voltage V --0.5,+130 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg (Top View) CaseOperatingTemperature T 150 C C Figure1.PinConnections TotalDeviceDissipation T =25C P 1050 W C D Derateabove25C 5.26 W/C (1,2) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit (4) ThermalResistance,JunctiontoCase C/W Pulsed:CaseTemperature75C, 300W Pulsed, 100sec PulseWidth,20%Duty Cycle, 50Vdc,I =100mA,230MHz Z 0.05 DQ JC CW: CaseTemperature87C,300W CW,50Vdc,I =1100mA,230MHz R 0.19 DQ JC 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) B (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (1) OffCharacteristics Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 130 Vdc (BR)DSS (V =0Vdc,I =50mA) GS D Zero Gate Voltage Drain Leakage Current I 5 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (1) GateThresholdVoltage V 1.7 2.2 2.7 Vdc GS(th) (V =10Vdc,I =480Adc) DS D GateQuiescentVoltage V 2.0 2.5 3.0 Vdc GS(Q) (V =50Vdc,I =100mAdc,MeasuredinFunctionalTest) DD D (1) Drain--SourceOn--Voltage V 0.25 Vdc DS(on) (V =10Vdc,I =1Adc) GS D (1) DynamicCharacteristics ReverseTransferCapacitance C 0.8 pF rss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 76 pF oss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 188 pF iss (V =50Vdc,V =0Vdc30mV(rms)ac 1MHz) DS GS FunctionalTests(InFreescaleTestFixture,50ohm system)V =50Vdc,I =100mA,P =300W Peak (60W Avg.),f=230MHz, DD DQ out Pulsed, 100sec PulseWidth,20%Duty Cycle PowerGain G 25.0 26.5 28.0 dB ps Drain Efficiency 72.0 74.0 % D Input ReturnLoss IRL --16 --9 dB LoadMismatch(InFreescaleApplicationTestFixture,50ohm system)V =50Vdc,I =100mA DD DQ VSWR65:1at allPhaseAngles NoDegradationinOutput Power Pulsed:P =300W Peak (60W Avg.),f=230MHz,Pulsed, out 100sec PulseWidth,20%Duty Cycle CW: P =300W Avg.,f=130MHz out 1. Eachsideofdevicemeasuredseparately. MRFE6VP6300HR3MRFE6VP6300HSR3 RF DeviceData FreescaleSemiconductor 2

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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