STAC3932B STMicroelectronics

STAC3932B Datasheet HF/VHF/UHF RF power N-channel MOSFET Features 1 V P 1 Order code Frequency Gain Efficiency DD OUT STAC3932B 123 MHz 100 V 580 W 24.6 dB 70 % 2 Excellent thermal stability 3 Common source push-pull configuration 3 P = 580 W typ. with 24.6 dB gain at 123 MHz OUT STAC780-4B In compliance with the 2002/95/EC European directive ST air-cavity STAC packaging technology Pin connection Pin Connection Description 1 Drain The STAC3932B is an N-channel MOS field-effect RF power transistor. It is intended 2 Source (bottom side) for use in 100 V DC large signal applications up to 250 MHz. 3 Gate Product status STAC3932B Product summary Order code STAC3932B Marking STAC3932 Package STAC780-4B Packing Box Base / Bulk qty 20 / 80 DS6157 - Rev 8 - July 2020 www.st.com For further information contact your local STMicroelectronics sales office.STAC3932B Electrical data 1 Electrical data 1.1 Maximum ratings Table 1. Absolute maximum ratings (T = 25 C) CASE Symbol Parameter Value Unit (1) V Drain source voltage 250 V (BR)DSS V Drain-gate voltage (R = 1 M) 250 V DGR GS V Gate-source voltage 20 V GS I Drain current 20 A D P Power dissipation 625 W DISS T Maximum operating junction temperature 200 C J T Storage temperature range -65 to +150 C STG 1. T = 150 C J 1.2 Thermal data Table 2. Thermal data Symbol Parameter Value Unit R Junction - case thermal resistance 0.28 C/W thJC 1.3 ESD protection characteristics Table 3. ESD protection Symbol Test Methodology Class HBM Human Body Model (per JESD22-A114) 2 DS6157 - Rev 8 page 2/16