STAC4932F1-MR STMicroelectronics

STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features Excellent thermal stability Common source push-pull configuration P = 1000 W min. (1200 W typ.) with 26 dB OUT gain 123 MHz Pulse conditions: 1 msec - 10% In compliance with the 2002/95/EC European directive ST air cavity packaging technology - STAC STAC244F package Air cavity Description The STAC4932F is a N-channel MOS field-effect Figure 1. Pin connection RF power transistor. It is intended for 100 V pulse 1 applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical 1 applications. The STAC4932B benefits from the latest generation of efficient, patent-pending package 2 technology, otherwise known as STAC . 2 3 1. Drain 3. Source 2. Gate (Bottom side) Table 1. Device summary Order code Marking Package Packaging STAC4932F STAC4932F STAC244F Plastic tray September 2010 Doc ID 17158 Rev 3 1/12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 12 change without notice.Contents STAC4932F Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 3 Impedance . 5 4 Typical performances 6 5 Package mechanical data . 9 6 Revision history . 11 2/12 Doc ID 17158 Rev 3