STB100N6F7 STMicroelectronics

STB100N6F7 N-channel 60 V, 4.7 m typ.,100 A STripFET F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT % STB100N6F7 60 V 5.6 m 100A125 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness . Applications Switching applications Figure 1. Internal schematic diagram Description This N-channel Power MOSFET utilizes % 7 STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. * 6 0 Y Table 1. Device summary Order code Marking Package Packaging STB100N6F7 100N6F7 DPAK Tape and Reel December 2015 DocID027210 Rev 3 1/15 This is information on a product in full production. www.st.com 3 7 Contents STB100N6F7 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 5 Packing information 12 6 Revision history . 14 2/15 DocID027210 Rev 3